Broadband visible light source based on AllnGaN light emitting diodes

Patent · Tue Dec 16 00:00:00 EST 2003

OSTI ID:1174635

Crawford, Mary H.; Nelson, Jeffrey S.

A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

• Research Organization: Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): 6,665,329
• Application Number: 10/165,824
• OSTI ID: 1174635
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE