Cubic nitride templates
Abstract
A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.
- Inventors:
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1083281
- Patent Number(s):
- 8431253
- Application Number:
- 12/321,705
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Burrell, Anthony K, McCleskey, Thomas Mark, Jia, Quanxi, Mueller, Alexander H, and Luo, Hongmei. Cubic nitride templates. United States: N. p., 2013.
Web.
Burrell, Anthony K, McCleskey, Thomas Mark, Jia, Quanxi, Mueller, Alexander H, & Luo, Hongmei. Cubic nitride templates. United States.
Burrell, Anthony K, McCleskey, Thomas Mark, Jia, Quanxi, Mueller, Alexander H, and Luo, Hongmei. Tue .
"Cubic nitride templates". United States. https://www.osti.gov/servlets/purl/1083281.
@article{osti_1083281,
title = {Cubic nitride templates},
author = {Burrell, Anthony K and McCleskey, Thomas Mark and Jia, Quanxi and Mueller, Alexander H and Luo, Hongmei},
abstractNote = {A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 30 00:00:00 EDT 2013},
month = {Tue Apr 30 00:00:00 EDT 2013}
}
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Works referenced in this record:
Cubic (zinc-blende) aluminum nitride
patent, February 2003
- Thompson, Margarita P.; Auner, Gregory W.
- US Patent Document 6,518,637
Method for growing single crystal GaN on silicon
patent, November 2004
- Peczalski, Andrzej; Nohava, Thomas E.
- US Patent Document 6,818,061
Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
patent, May 2007
- Ramdani, Jamal; Hilt, Lyndee
- US Patent Document 7,211,852
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
patent, July 2007
- Sarayama, Seiji; Shimada, Masahiko; Yamane, Hisanori
- US Patent Document 7,250,640
Method for the growth of large low-defect single crystals
patent, November 2008
- Powell, J. Anthony; Neudeck, Philip G.; Trunek, Andrew J.
- US Patent Document 7,449,065
AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate
patent, January 2009
- Nakahata, Seiji; Hirota, Ryu; Motoki, Kensaku
- US Patent Document 7,473,315
Surface-controlled growth of LaAlO3 thin films by atomic layer epitaxy
journal, January 2001
- Nieminen, Minna; Sajavaara, Timo; Rauhala, Eero
- Journal of Materials Chemistry, Vol. 11, Issue 9
MBE growth of wurtzite GaN on LaAlO3(100) substrate
journal, May 2000
- Lee, J. J.; Park, Y. S.; Yang, C. S.
- Journal of Crystal Growth, Vol. 213, Issue 1-2
Epitaxial growth of semiconductors on SrTiO3 substrates
journal, July 2001
- Fujioka, H.; Ohta, J.; Katada, H.
- Journal of Crystal Growth, Vol. 229, Issue 1-4
Stabilization of zinc-blende cubic AlN in AlN/W superlattices
journal, September 2001
- Kim, I. W.; Madan, A.; Guruz, M. W.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 5
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
journal, May 1993
- Nakamura, Shuji; Senoh, Masayuki; Mukai, Takashi
- Applied Physics Letters, Vol. 62, Issue 19
Hot electron microwave conductivity of wide bandgap semiconductors
journal, October 1976
- Das, P.; Ferry, D. K.
- Solid-State Electronics, Vol. 19, Issue 10
Domain epitaxy: A unified paradigm for thin film growth
journal, January 2003
- Narayan, J.; Larson, B. C.
- Journal of Applied Physics, Vol. 93, Issue 1
+Capacitance-voltage characteristics of BiFeO3∕SrTiO3∕GaN heteroepitaxial structures
journal, July 2007
- Yang, S. Y.; Zhan, Q.; Yang, P. L.
- Applied Physics Letters, Vol. 91, Issue 2
Strong Photoluminescence Emission from GaN on SrTiO3
journal, November 1999
- Tampo, H.; Asahi, H.; Hiroki, M.
- physica status solidi (b), Vol. 216, Issue 1
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
journal, November 1999
- Wu, Jun; Kudo, M.; Nagayama, A.
- physica status solidi (a), Vol. 176, Issue 1
Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy
journal, March 2000
- Sharma, A. K.; Narayan, J.; Jin, C.
- Applied Physics Letters, Vol. 76, Issue 11
Preparation of (001)-oriented PZT thin films on silicon wafers using pulsed laser deposition
journal, May 2001
- Zhao, Jing; Lu, Li; Thompson, C. V.
- Journal of Crystal Growth, Vol. 225, Issue 2-4