skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Lattice matched crystalline substrates for cubic nitride semiconductor growth

Abstract

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

Inventors:
; ;
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1171096
Patent Number(s):
8,961,687
Application Number:
12/551,430
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 Aug 31
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Norman, Andrew G, Ptak, Aaron J, and McMahon, William E. Lattice matched crystalline substrates for cubic nitride semiconductor growth. United States: N. p., 2015. Web.
Norman, Andrew G, Ptak, Aaron J, & McMahon, William E. Lattice matched crystalline substrates for cubic nitride semiconductor growth. United States.
Norman, Andrew G, Ptak, Aaron J, and McMahon, William E. Tue . "Lattice matched crystalline substrates for cubic nitride semiconductor growth". United States. https://www.osti.gov/servlets/purl/1171096.
@article{osti_1171096,
title = {Lattice matched crystalline substrates for cubic nitride semiconductor growth},
author = {Norman, Andrew G and Ptak, Aaron J and McMahon, William E},
abstractNote = {Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {2}
}

Patent:

Save / Share:

Works referenced in this record:

Epitaxial growth of GaAs/NiAl/GaAs heterostructures
journal, April 1988

  • Sands, T.; Harbison, J. P.; Chan, W. K.
  • Applied Physics Letters, Vol. 52, Issue 15
  • DOI: 10.1063/1.99162

Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE
journal, April 1990


GdN (111) heteroepitaxy on GaN (0001) by N2 plasma and NH3 molecular beam epitaxy
journal, February 2009


Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
journal, March 1997

  • Sun, C. J.; Yang, J. W.; Lim, B. W.
  • Applied Physics Letters, Vol. 70, Issue 11
  • DOI: 10.1063/1.118557

MBE growth of GaN on MgO substrate
journal, April 2007


Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy
journal, December 1988

  • Tadayon, Bijan; Tadayon, Saied; Spencer, M. G.
  • Applied Physics Letters, Vol. 53, Issue 26
  • DOI: 10.1063/1.100188

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
journal, December 2005


Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
journal, April 2003

  • Tolle, J.; Roucka, R.; Tsong, I. S. T.
  • Applied Physics Letters, Vol. 82, Issue 15
  • DOI: 10.1063/1.1566099

Heteroepitaxy of Large-Misfit Systems: Role of Coincidence Lattice
journal, July 2000


Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates
journal, December 2000

  • Tsuchiya, Tohru; Ohnishi, Masato; Wakahara, Akihiro
  • Journal of Crystal Growth, Vol. 220, Issue 3, p. 191-196
  • DOI: 10.1016/S0022-0248(00)00548-0

Band parameters for nitrogen-containing semiconductors
journal, September 2003

  • Vurgaftman, I.; Meyer, J. R.
  • Journal of Applied Physics, Vol. 94, Issue 6
  • DOI: 10.1063/1.1600519

Microstructure evolution of GaN buffer layer on MgAl2O4 substrate
journal, October 1998


Strong photoluminescence emission from polycrystalline GaN layers grown on W, Mo, Ta, and Nb metal substrates
journal, May 2001

  • Yamada, K.; Asahi, H.; Tampo, H.
  • Applied Physics Letters, Vol. 78, Issue 19
  • DOI: 10.1063/1.1371528

Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy
journal, May 1991

  • Yao, Takafumi; Nakahara, Hiroaki; Matuhata, Hirofumi
  • Journal of Crystal Growth, Vol. 111, Issue 1-4, p. 221-227
  • DOI: 10.1016/0022-0248(91)90975-B

Lattice Parameters and Local Lattice Distortions in fcc-Ni Solutions
journal, April 2007

  • Wang, Tao; Chen, Long-Qing; Liu, Zi-Kui
  • Metallurgical and Materials Transactions A, Vol. 38, Issue 3
  • DOI: 10.1007/s11661-007-9091-z

Transmission electron microscope study on electrodeposited Gd2O3 and Gd2Zr2O7 buffer layers for YBa2Cu3O7−δ superconductors
journal, July 2008

  • Zhao, Wenjun; Norman, Andrew; Phok, Sovannary
  • Physica C: Superconductivity and its Applications, Vol. 468, Issue 14, p. 1092-1096
  • DOI: 10.1016/j.physc.2008.05.282

Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates
journal, August 2002

  • Andrianov, A. V.; Yamada, K.; Tampo, H.
  • Semiconductors, Vol. 36, Issue 8
  • DOI: 10.1134/1.1500464

Heteroepitaxy of Doped and Undoped Cubic Group III-Nitrides
journal, November 1999


Strong Photoluminescence Emission from Polycrystalline GaN Grown on Metal Substrate by NH3 Source MBE
journal, December 2001


Thin film poly III–V space solar cells
conference, May 2008

  • Bailey, Sheila G.; Wilt, David M.; McNatt, Jeremiah S.
  • 2008 33rd IEEE Photovolatic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC.2008.4922653

Triple-Junction III–V Based Concentrator Solar Cells: Perspectives and Challenges
journal, April 2006

  • Baur, C.; Bett, A. W.; Dimroth, F.
  • Journal of Solar Energy Engineering, Vol. 129, Issue 3
  • DOI: 10.1115/1.2735346

The Promise and Challenge of Solid-State Lighting
journal, December 2001

  • Bergh, Arpad; Craford, George; Duggal, Anil
  • Physics Today, Vol. 54, Issue 12
  • DOI: 10.1063/1.1445547

Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures
journal, April 1990


Growth and characterization of GaAs/Al/GaAs heterostructures
journal, April 1990

  • Bhattacharya, P.; Oh, J. E.; Singh, J.
  • Journal of Applied Physics, Vol. 67, Issue 8
  • DOI: 10.1063/1.345035

Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
journal, June 1978

  • Cho, A. Y.; Dernier, P. D.
  • Journal of Applied Physics, Vol. 49, Issue 6
  • DOI: 10.1063/1.325286

On an unusual azimuthal orientational relationship in the system gallium nitride layer on spinel substrate
journal, March 2000

  • Efimov, A. N.; Lebedev, A. O.; Lundin, V. V.
  • Crystallography Reports, Vol. 45, Issue 2
  • DOI: 10.1134/1.171188

Material considerations for terawatt level deployment of photovoltaics
journal, February 2008


Properties of epitaxial GaN on refractory metal substrates
journal, February 2007

  • Freitas, Jaime A.; Rowland, Larry B.; Kim, Jihyun
  • Applied Physics Letters, Vol. 90, Issue 9
  • DOI: 10.1063/1.2709512

III N V semiconductors for solar photovoltaic applications
journal, July 2002


High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
journal, July 2007

  • Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W.
  • Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502
  • DOI: 10.1063/1.2753729

40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
journal, September 2008

  • Geisz, J. F.; Friedman, D. J.; Ward, J. S.
  • Applied Physics Letters, Vol. 93, Issue 12, Article No. 123505
  • DOI: 10.1063/1.2988497

Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
journal, January 1996

  • George, T.; Jacobsohn, E.; Pike, W. T.
  • Applied Physics Letters, Vol. 68, Issue 3
  • DOI: 10.1063/1.116708

The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors
journal, August 2004

  • Goyal, Amit; Paranthaman, M. Parans; Schoop, U.
  • MRS Bulletin, Vol. 29, Issue 8
  • DOI: 10.1557/mrs2004.161

Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100)
journal, October 2000


Epitaxial growth of AlN films on single-crystalline Ta substrates
journal, August 2007

  • Hirata, S.; Okamoto, K.; Inoue, S.
  • Journal of Solid State Chemistry, Vol. 180, Issue 8, p. 2335-2339
  • DOI: 10.1016/j.jssc.2007.06.008

Nucleation and growth of epitaxial ZrB2(0001) on Si(111)
journal, July 2004


Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition
journal, April 2006


Epitaxial growth of GaN on copper substrates
journal, June 2006

  • Inoue, S.; Okamoto, K.; Matsuki, N.
  • Applied Physics Letters, Vol. 88, Issue 26
  • DOI: 10.1063/1.2213178

Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
journal, October 1996

  • Asif Khan, M.; Sun, C. J.; Yang, J. W.
  • Applied Physics Letters, Vol. 69, Issue 16
  • DOI: 10.1063/1.117656

40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
journal, April 2007

  • King, R. R.; Law, D. C.; Edmondson, K. M.
  • Applied Physics Letters, Vol. 90, Issue 18
  • DOI: 10.1063/1.2734507

Record breakers
journal, May 2008


Bowing parameter of zincblende InxGa1−xN
journal, December 2007


Properties of GaN epitaxial layer grown on (111) MgAl2O4 substrate
journal, February 1997


Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells
journal, February 2007

  • Li, Shunfeng; Schörmann, Jörg; As, Donat J.
  • Applied Physics Letters, Vol. 90, Issue 7
  • DOI: 10.1063/1.2475564

Room-Temperature Epitaxial Growth of GaN on Atomically Flat MgAl 2 O 4 Substrates by Pulsed-Laser Deposition
journal, April 2006

  • Li, Guoqiang; Ohta, Jitsuo; Okamoto, Koichiro
  • Japanese Journal of Applied Physics, Vol. 45, Issue No. 17
  • DOI: 10.1143/JJAP.45.L457

Epitaxial growth of single-crystalline AlN films on tungsten substrates
journal, December 2006

  • Li, Guoqiang; Kim, Tae-Won; Inoue, Shigeru
  • Applied Physics Letters, Vol. 89, Issue 24
  • DOI: 10.1063/1.2404588

Suppression of domain formation in GaN layers grown on Ge(111)
journal, February 2009


Morphological and chemical considerations for the epitaxy of metals on semiconductors
journal, January 1984

  • Ludeke, R.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 2, Issue 3
  • DOI: 10.1116/1.582833

Epitaxial relationships between Al, Ag and GaAs{001} surfaces
journal, January 1982


Growth and properties of GaN and AlN layers on silver substrates
journal, November 2005

  • Mikulics, Martin; Kočan, Martin; Rizzi, Angela
  • Applied Physics Letters, Vol. 87, Issue 21
  • DOI: 10.1063/1.2135879

Growth of InN films on spinel substrates by pulsed laser deposition
journal, October 2007

  • Mitamura, K.; Ohta, J.; Fujioka, H.
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 1, Issue 5
  • DOI: 10.1002/pssr.200701138

Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates
journal, May 1998

  • Nikishin, S. A.; Temkin, H.; Antipov, V. G.
  • Applied Physics Letters, Vol. 72, Issue 19
  • DOI: 10.1063/1.121357

Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate
journal, May 2006

  • Pacheco-Salazar, D. G.; Leite, J. R.; Cerdeira, F.
  • Semiconductor Science and Technology, Vol. 21, Issue 7
  • DOI: 10.1088/0268-1242/21/7/003

Epitaxy of Dissimilar Materials
journal, August 1995


Increasing cube texture in high purity aluminium foils for capacitors
journal, December 2005

  • Pan, F. S.; Peng, J.; Tang, A. T.
  • Materials Science and Technology, Vol. 21, Issue 12
  • DOI: 10.1179/174328405X71648

Research challenges to ultra-efficient inorganic solid-state lighting
journal, December 2007

  • Phillips, J. M.; Coltrin, M. E.; Crawford, M. H.
  • Laser & Photonics Review, Vol. 1, Issue 4, p. 307-333
  • DOI: 10.1002/lpor.200710019

The growth of epitaxial aluminium on As containing compound semiconductors
journal, January 1999


Growth and characterization of epitaxial Fe[sub x]Al[sub 1−x]/(In,Al)As/InP and III–V/Fe[sub x]Al[sub 1−x]/(In,Al)As/InP structures
journal, January 1999

  • Sacks, R. N.; Qin, L.; Jazwiecki, M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 3
  • DOI: 10.1116/1.590742

Domain epitaxy: A unified paradigm for thin film growth
journal, January 2003

  • Narayan, J.; Larson, B. C.
  • Journal of Applied Physics, Vol. 93, Issue 1
  • DOI: 10.1063/1.1528301

Low cost, single crystal-like substrates for practical, high efficiency solar cells
conference, January 1997

  • Goyal, A.; Norton, D. P.; Paranthaman, M.
  • Future generation photovoltaic technologies, AIP Conference Proceedings
  • DOI: 10.1063/1.53462

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4
journal, January 2006

  • Ohta, J.; Mitamura, K.; Kobayashi, A.
  • Solid State Communications, Vol. 137, Issue 4, p. 208-211
  • DOI: 10.1016/j.ssc.2005.11.015

Heteroepitaxy of dissimilar materials: effect of interface structure on strain and defect formation
journal, March 2002


InGaN‐GaN based light‐emitting diodes over (111) spinel substrates
journal, July 1996

  • Yang, J. W.; Chen, Q.; Sun, C. J.
  • Applied Physics Letters, Vol. 69, Issue 3
  • DOI: 10.1063/1.118063

Metal-oxide interfaces at the nanoscale
journal, June 2009


Lattice-matched HfN buffer layers for epitaxy of GaN on Si
journal, August 2002

  • Armitage, R.; Yang, Qing; Feick, H.
  • Applied Physics Letters, Vol. 81, Issue 8
  • DOI: 10.1063/1.1501447

Epitaxy and Molecular Organization on Solid Substrates
journal, February 2001


Epitaxial growth in large‐lattice‐mismatch systems
journal, January 1994

  • Zheleva, Tsvetanka; Jagannadham, K.; Narayan, J.
  • Journal of Applied Physics, Vol. 75, Issue 2
  • DOI: 10.1063/1.356440

New frontiers in thin film growth and nanomaterials
journal, February 2005