Lattice matched crystalline substrates for cubic nitride semiconductor growth

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

Title: Lattice matched crystalline substrates for cubic nitride semiconductor growth

Abstract

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

Inventors:: Norman, Andrew G; Ptak, Aaron J; McMahon, William E

Issue Date:: Tue Feb 24 00:00:00 EST 2015

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1171096

Patent Number(s):: 8961687

Application Number:: 12/551,430

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0237 - {Materials}
H01L21/02425 - {Conductive materials, e.g. metallic silicides}
H01L21/02433 - {Crystal orientation}
H01L21/0254 - {Nitrides}
H01L21/02609 - {Crystal orientation}
H01L29/04 - characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L29/2003 - {Nitride compounds}

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DOE Contract Number:: AC36-08GO28308

Resource Type:: Patent

Resource Relation:: Patent File Date: 2009 Aug 31

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Norman, Andrew G, Ptak, Aaron J, and McMahon, William E. Lattice matched crystalline substrates for cubic nitride semiconductor growth.  United States: N. p., 2015. 
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                    Norman, Andrew G, Ptak, Aaron J, & McMahon, William E. Lattice matched crystalline substrates for cubic nitride semiconductor growth.  United States.

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                    Norman, Andrew G, Ptak, Aaron J, and McMahon, William E. Tue .  
        "Lattice matched crystalline substrates for cubic nitride semiconductor growth".  United States.  https://www.osti.gov/servlets/purl/1171096.

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@article{osti_1171096,

  title        = {Lattice matched crystalline substrates for cubic nitride semiconductor growth},

  author       = {Norman, Andrew G and Ptak, Aaron J and McMahon, William E},

  abstractNote = {Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Feb 24 00:00:00 EST 2015},

  month        = {Tue Feb 24 00:00:00 EST 2015}

}

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