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Title: Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

Abstract

A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

Inventors:
 [1];  [1];  [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL-NM), Albuquerque, NM
Sponsoring Org.:
USDOE
OSTI Identifier:
978685
Patent Number(s):
7,670,933
Application Number:
11/866,748
Assignee:
Sandia Corporation (Albuquerque, NM) SSO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, George T, Li, Qiming, and Creighton, J Randall. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides. United States: N. p., 2010. Web.
Wang, George T, Li, Qiming, & Creighton, J Randall. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides. United States.
Wang, George T, Li, Qiming, and Creighton, J Randall. Tue . "Nanowire-templated lateral epitaxial growth of non-polar group III nitrides". United States. https://www.osti.gov/servlets/purl/978685.
@article{osti_978685,
title = {Nanowire-templated lateral epitaxial growth of non-polar group III nitrides},
author = {Wang, George T and Li, Qiming and Creighton, J Randall},
abstractNote = {A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {3}
}

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