Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
Abstract
A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 978685
- Patent Number(s):
- 7670933
- Application Number:
- 11/866,748
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Wang, George T, Li, Qiming, and Creighton, J Randall. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides. United States: N. p., 2010.
Web.
Wang, George T, Li, Qiming, & Creighton, J Randall. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides. United States.
Wang, George T, Li, Qiming, and Creighton, J Randall. Tue .
"Nanowire-templated lateral epitaxial growth of non-polar group III nitrides". United States. https://www.osti.gov/servlets/purl/978685.
@article{osti_978685,
title = {Nanowire-templated lateral epitaxial growth of non-polar group III nitrides},
author = {Wang, George T and Li, Qiming and Creighton, J Randall},
abstractNote = {A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {3}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Nonpolar (11&1macr;0)a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02)r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth
journal,
- Craven, M. D.; Lim, S. H.; Wu, F.
Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
journal, November 2006
- Wang, George T.; Talin, A. Alec; Werder, Donald J.
- Nanotechnology, Vol. 17, Issue 23
One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters
journal, June 2007
- Iida, D.; Miura, A.; Okadome, Y.
- physica status solidi (a), Vol. 204, Issue 6
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
journal, December 2006
- Wang, Te-Chung; Lu, Tien-Chang; Ko, Tsung-Shine
- Applied Physics Letters, Vol. 89, Issue 25