Title: Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

Abstract

The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Inventors:

Li, Ting ^[1]

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+ Show Inventor Affiliations

1. Ventura, CA

Issue Date:

Tue Apr 26 00:00:00 EDT 2011

Research Org.:

Cree, Inc. (Durham, NC)

Sponsoring Org.:

USDOE

OSTI Identifier:

1016672

Patent Number(s):

7932106

Application Number:

US Patent Application 11/498,418

Assignee:

Cree, Inc. (Durham, NC)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L2224/0401 - Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
H01L2224/13 - of an individual bump connector
H01L2924/00011 - Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H01L2924/10155 - being other than a cuboid
H01L2924/10158 - at the passive surface
H01L33/0095 - {Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination}
H01L33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

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DOE Contract Number:  

FC26-03NT41943

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

47 OTHER INSTRUMENTATION