High extraction efficiency ultraviolet light-emitting diode
Abstract
Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.
- Inventors:
- Issue Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1226807
- Patent Number(s):
- 9196788
- Application Number:
- 14/480,072
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Sep 08
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Citation Formats
Wierer, Jonathan, Montano, Ines, and Allerman, Andrew A. High extraction efficiency ultraviolet light-emitting diode. United States: N. p., 2015.
Web.
Wierer, Jonathan, Montano, Ines, & Allerman, Andrew A. High extraction efficiency ultraviolet light-emitting diode. United States.
Wierer, Jonathan, Montano, Ines, and Allerman, Andrew A. Tue .
"High extraction efficiency ultraviolet light-emitting diode". United States. https://www.osti.gov/servlets/purl/1226807.
@article{osti_1226807,
title = {High extraction efficiency ultraviolet light-emitting diode},
author = {Wierer, Jonathan and Montano, Ines and Allerman, Andrew A.},
abstractNote = {Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {11}
}
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Works referenced in this record:
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007
- Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
- Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
First-principles calculations of effective-mass parameters of AlN and GaN
journal, September 1995
- Suzuki, Masakatsu; Uenoyama, Takeshi; Yanase, Akira
- Physical Review B, Vol. 52, Issue 11
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
journal, September 2010
- Zhang, Jing; Zhao, Hongping; Tansu, Nelson
- Applied Physics Letters, Vol. 97, Issue 11
Laser gain properties of AlGaN quantum wells
journal, December 2005
- Chow, W. W.; Kneissl, M.
- Journal of Applied Physics, Vol. 98, Issue 11
Unique optical properties of AlGaN alloys and related ultraviolet emitters
journal, June 2004
- Nam, K. B.; Li, J.; Nakarmi, M. L.
- Applied Physics Letters, Vol. 84, Issue 25
Polarization of III-nitride blue and ultraviolet light-emitting diodes
journal, February 2005
- Shakya, J.; Knabe, K.; Kim, K. H.
- Applied Physics Letters, Vol. 86, Issue 9
Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
journal, August 2006
- Kawanishi, Hideo; Senuma, Masanori; Yamamoto, Mao
- Applied Physics Letters, Vol. 89, Issue 8
Radiation and polarization properties of free-exciton emission from AlN (0001) surface
journal, June 2007
- Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
- Applied Physics Letters, Vol. 90, Issue 26
Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
journal, October 2010
- Kolbe, Tim; Knauer, Arne; Chua, Chris
- Applied Physics Letters, Vol. 97, Issue 17
Analysis of optical emission from high-aluminum AlGaN quantum-well structures
journal, June 2004
- Wieczorek, S.; Chow, W. W.; Lee, S. R.
- Applied Physics Letters, Vol. 84, Issue 24
Optical anisotropy in [0001]-oriented quantum wells
journal, March 2009
- Banal, R. G.; Funato, M.; Kawakami, Y.
- Physical Review B, Vol. 79, Issue 12
Strain-driven light-polarization switching in deep ultraviolet nitride emitters
journal, July 2011
- Sharma, T. K.; Naveh, D.; Towe, E.
- Physical Review B, Vol. 84, Issue 3
Valence band engineering for remarkable enhancement of surface emission in AlGaN deep-ultraviolet light emitting diodes
journal, May 2008
- Atsushi Yamaguchi, A.
- physica status solidi (c), Vol. 5, Issue 6
Optical polarization in c-plane Al-rich AlN/Al x Ga 1-x N single quantum wells
journal, July 2012
- Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.
- Applied Physics Letters, Vol. 101, Issue 4