Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics
Abstract
Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionallymore »
- Inventors:
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1126701
- Patent Number(s):
- 8669164
- Application Number:
- 12/753,682
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Maxwell, James L, Rose, Chris R, Black, Marcie R, and Springer, Robert W. Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics. United States: N. p., 2014.
Web.
Maxwell, James L, Rose, Chris R, Black, Marcie R, & Springer, Robert W. Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics. United States.
Maxwell, James L, Rose, Chris R, Black, Marcie R, and Springer, Robert W. Tue .
"Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics". United States. https://www.osti.gov/servlets/purl/1126701.
@article{osti_1126701,
title = {Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics},
author = {Maxwell, James L and Rose, Chris R and Black, Marcie R and Springer, Robert W},
abstractNote = {Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {3}
}
Works referenced in this record:
Method and apparatus for the freeform growth of three-dimensional structures using pressurized precursor flows and growth rate control
patent, July 1998
- Maxwell, James L.; Pegna, Joseph
- US Patent Document 5,786,023
Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures
patent-application, December 2006
- Maxwell, James L.; Boman, Mats
- US Patent Application 11/143179; 20060275537
Containerless fabrication of tungsten single crystals using laser CVD for field emission applications
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