DOE Patents DOE Patents
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search DOE Patents

Title: Tailoring nanocrystalline diamond film properties

Abstract

A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

Inventors:
 [1];  [2];  [3];  [4]
+ Show Inventor Affiliations
  1. Downers Grove, IL
  2. Somerville, MA
  3. Orlando, FL
  4. Naperville, IL
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
913005
Patent Number(s):
6592839
Application Number:
09/255,919
Assignee:
The University of Chicago (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Show more
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gruen, Dieter M, McCauley, Thomas G, Zhou, Dan, and Krauss, Alan R. Tailoring nanocrystalline diamond film properties. United States: N. p., 2003. Web.
Copy to clipboard
Gruen, Dieter M, McCauley, Thomas G, Zhou, Dan, & Krauss, Alan R. Tailoring nanocrystalline diamond film properties. United States.
Copy to clipboard
Gruen, Dieter M, McCauley, Thomas G, Zhou, Dan, and Krauss, Alan R. Tue . "Tailoring nanocrystalline diamond film properties". United States. https://www.osti.gov/servlets/purl/913005.
Copy to clipboard
@article{osti_913005,
title = {Tailoring nanocrystalline diamond film properties},
author = {Gruen, Dieter M and McCauley, Thomas G and Zhou, Dan and Krauss, Alan R},
abstractNote = {A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 15 00:00:00 EDT 2003},
month = {Tue Jul 15 00:00:00 EDT 2003}
}
Copy to clipboard
Patent:
View Patent
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Effects of noble gases on diamond deposition from methane‐hydrogen microwave plasmas
journal, August 1990

    [ × clear filter / sort ]

    Similar Records in DOE Patents and OSTI.GOV collections: