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Title: Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates

Abstract

A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.

Inventors:
 [1];  [2];  [3];  [4]
  1. Plainfield, IL
  2. Downers Grove, IL
  3. Bolingbrook, IL
  4. Woodridge, IL
Issue Date:
Research Org.:
University of Chicago, Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1012638
Patent Number(s):
7556982
Application Number:
10/892,736
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
W-31-109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carlisle, John A, Gruen, Dieter M, Auciello, Orlando, and Xiao, Xingcheng. Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates. United States: N. p., 2009. Web.
Carlisle, John A, Gruen, Dieter M, Auciello, Orlando, & Xiao, Xingcheng. Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates. United States.
Carlisle, John A, Gruen, Dieter M, Auciello, Orlando, and Xiao, Xingcheng. Tue . "Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates". United States. https://www.osti.gov/servlets/purl/1012638.
@article{osti_1012638,
title = {Method to grow pure nanocrystalline diamond films at low temperatures and high deposition rates},
author = {Carlisle, John A and Gruen, Dieter M and Auciello, Orlando and Xiao, Xingcheng},
abstractNote = {A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500.degree. C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 10.sup.10sites/cm.sup.2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500.degree. C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500.degree. C.-4 hours or less onto a variety of substrates such as MEMS devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {7}
}

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