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Title: Anisotropy-based crystalline oxide-on-semiconductor material

Abstract

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

Inventors:
 [1];  [2]
  1. (Kingston, TN)
  2. (Oak Ridge, TN)
Issue Date:
Research Org.:
LOCKHEED MARTIN ENERGY RES COR
OSTI Identifier:
873109
Patent Number(s):
6093242
Assignee:
UT-Battelle, LLC (Oak Ridge, TN) ORNL
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
anisotropy-based; crystalline; oxide-on-semiconductor; material; semiconductor; structure; device; application; utilizes; substrate; semiconductor-based; silicon; film; oxide; unit; cells; capable; exhibiting; anisotropic; behavior; overlying; surface; exposed; in-plane; stain; influences; geometric; shape; arranges; directional-dependent; quality; predisposed; orientation; relative; predisposition; enables; beneficial; advantage; characteristics; operation; example; instance; perovskite; spinel; similarly-related; cubic; appropriate; exhibit; ferroelectric; piezoelectric; pyroelectric; electro-optic; ferromagnetic; antiferromagnetic; magneto-optic; dielectric; properties; synergistically; couple; underlying; semiconductor-based material; underlying semiconductor; crystalline oxide; predisposed orientation; unit cells; semiconductor substrate; semiconductor material; substrate surface; semiconductor device; unit cell; orientation relative; semiconductor structure; geometric shape; cubic structure; exhibit ferroelectric; dielectric properties; /117/

Citation Formats

McKee, Rodney Allen, and Walker, Frederick Joseph. Anisotropy-based crystalline oxide-on-semiconductor material. United States: N. p., 2000. Web.
McKee, Rodney Allen, & Walker, Frederick Joseph. Anisotropy-based crystalline oxide-on-semiconductor material. United States.
McKee, Rodney Allen, and Walker, Frederick Joseph. Sat . "Anisotropy-based crystalline oxide-on-semiconductor material". United States. https://www.osti.gov/servlets/purl/873109.
@article{osti_873109,
title = {Anisotropy-based crystalline oxide-on-semiconductor material},
author = {McKee, Rodney Allen and Walker, Frederick Joseph},
abstractNote = {A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}

Patent:

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