DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

Abstract

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

Inventors:
 [1];  [2];  [2]
  1. Kingston, TN
  2. Oak Ridge, TN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
873354
Patent Number(s):
6143072
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
generic; process; preparing; crystalline; oxide; semiconductor; substrate; growing; epitaxially; surface; structure; constructed; described; germanium; silicon; represented; formula; ao; non-negative; integer; repeats; planes; alkaline; earth; oxides; earth-containing; perovskite; atomic; level; control; interfacial; thermodynamics; multicomponent; highly; perfect; interface; obtained; crystalline oxide; level control; earth oxides; earth oxide; semiconductor substrate; alkaline earth; perovskite oxides; oxide epitaxially; perovskite oxide; /117/

Citation Formats

McKee, Rodney A, Walker, Frederick J, and Chisholm, Matthew F. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate. United States: N. p., 2000. Web.
McKee, Rodney A, Walker, Frederick J, & Chisholm, Matthew F. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate. United States.
McKee, Rodney A, Walker, Frederick J, and Chisholm, Matthew F. Sat . "Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate". United States. https://www.osti.gov/servlets/purl/873354.
@article{osti_873354,
title = {Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate},
author = {McKee, Rodney A and Walker, Frederick J and Chisholm, Matthew F},
abstractNote = {A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2000},
month = {1}
}