Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface
Abstract
A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.
- Inventors:
- Issue Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1174597
- Patent Number(s):
- 6,652,989
- Application Number:
- 09/910,322
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN) ORNL
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
McKee, Rodney A., and Walker, Frederick J. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface. United States: N. p., 2003.
Web.
McKee, Rodney A., & Walker, Frederick J. Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface. United States.
McKee, Rodney A., and Walker, Frederick J. Tue .
"Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface". United States. https://www.osti.gov/servlets/purl/1174597.
@article{osti_1174597,
title = {Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface},
author = {McKee, Rodney A. and Walker, Frederick J.},
abstractNote = {A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {11}
}