Strained layer Fabry-Perot device
Abstract
An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.
- Inventors:
-
- Albuquerque, NM
- Tijeras, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 869323
- Patent Number(s):
- 5315430
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02F - DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- strained; layer; fabry-perot; device; asymmetric; reflectance; modulator; afpm; consists; active; region; top; bottom; mirrors; mirror; affixed; substrate; buffer; comprises; strained-layer; bandgap; thickness; chosen; resonance; frequency; lattice; matched; interface; operates; wavelengths; commercially; available; semiconductor; lasers; semiconductor laser; lattice matched; buffer layer; active region; commercially available; strained layer; semiconductor lasers; device operates; reflectance modulator; bottom mirror; /359/257/
Citation Formats
Brennan, Thomas M, Fritz, Ian J, and Hammons, Burrell E. Strained layer Fabry-Perot device. United States: N. p., 1994.
Web.
Brennan, Thomas M, Fritz, Ian J, & Hammons, Burrell E. Strained layer Fabry-Perot device. United States.
Brennan, Thomas M, Fritz, Ian J, and Hammons, Burrell E. Sat .
"Strained layer Fabry-Perot device". United States. https://www.osti.gov/servlets/purl/869323.
@article{osti_869323,
title = {Strained layer Fabry-Perot device},
author = {Brennan, Thomas M and Fritz, Ian J and Hammons, Burrell E},
abstractNote = {An asymmetric Fabry-Perot reflectance modulator (AFPM) consists of an active region between top and bottom mirrors, the bottom mirror being affixed to a substrate by a buffer layer. The active region comprises a strained-layer region having a bandgap and thickness chosen for resonance at the Fabry-Perot frequency. The mirrors are lattice matched to the active region, and the buffer layer is lattice matched to the mirror at the interface. The device operates at wavelengths of commercially available semiconductor lasers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1994},
month = {Sat Jan 01 00:00:00 EST 1994}
}
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