Method of producing strained-layer semiconductor devices via subsurface-patterning
Abstract
A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 868844
- Patent Number(s):
- 5225368
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; producing; strained-layer; semiconductor; devices; via; subsurface-patterning; described; patterning; subsurface; features; device; internal; strained; layer; comprises; creating; pattern; material; predetermined; thickness; stabilizes; lie; beneath; subsequently; heating; step; applied; relaxation; whereby; dislocations; result; relaxed; impair; electrical; transport; therethrough; predetermined thickness; surface feature; surface features; method comprises; semiconductor material; semiconductor layer; semiconductor device; semiconductor devices; strained layer; method comprise; heating step; whereby dislocation; devices via; /438/
Citation Formats
Dodson, Brian W. Method of producing strained-layer semiconductor devices via subsurface-patterning. United States: N. p., 1993.
Web.
Dodson, Brian W. Method of producing strained-layer semiconductor devices via subsurface-patterning. United States.
Dodson, Brian W. Fri .
"Method of producing strained-layer semiconductor devices via subsurface-patterning". United States. https://www.osti.gov/servlets/purl/868844.
@article{osti_868844,
title = {Method of producing strained-layer semiconductor devices via subsurface-patterning},
author = {Dodson, Brian W},
abstractNote = {A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1993},
month = {Fri Jan 01 00:00:00 EST 1993}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Excess stress and the stability of strained heterostructures
journal, September 1988
- Tsao, J. Y.; Dodson, B. W.
- Applied Physics Letters, Vol. 53, Issue 10