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Title: Method of producing strained-layer semiconductor devices via subsurface-patterning

Abstract

A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

Inventors:
 [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
868844
Patent Number(s):
5225368
Assignee:
United States of America as represented by United States (Washington, DC) SNL
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; producing; strained-layer; semiconductor; devices; via; subsurface-patterning; described; patterning; subsurface; features; device; internal; strained; layer; comprises; creating; pattern; material; predetermined; thickness; stabilizes; lie; beneath; subsequently; heating; step; applied; relaxation; whereby; dislocations; result; relaxed; impair; electrical; transport; therethrough; predetermined thickness; surface feature; surface features; method comprises; semiconductor material; semiconductor layer; semiconductor device; semiconductor devices; strained layer; method comprise; heating step; whereby dislocation; devices via; /438/

Citation Formats

Dodson, Brian W. Method of producing strained-layer semiconductor devices via subsurface-patterning. United States: N. p., 1993. Web.
Dodson, Brian W. Method of producing strained-layer semiconductor devices via subsurface-patterning. United States.
Dodson, Brian W. Fri . "Method of producing strained-layer semiconductor devices via subsurface-patterning". United States. https://www.osti.gov/servlets/purl/868844.
@article{osti_868844,
title = {Method of producing strained-layer semiconductor devices via subsurface-patterning},
author = {Dodson, Brian W.},
abstractNote = {A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {1}
}

Patent:

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