Process for forming one or more substantially pure layers in substrate material using ion implantation
Abstract
A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.
- Inventors:
-
- San Ramon, CA
- New Carrollton, MD
- Davis, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 868358
- Patent Number(s):
- 5124174
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; forming; substantially; pure; layers; substrate; material; implantation; disclosed; monocrystalline; layer; implantable; element; selecting; implanted; temperatures; limited; mutual; solubility; form; intermediate; phases; implanting; sufficient; amount; permit; formation; desired; annealing; step; required; formed; article; implantable element; sufficient amount; substantially pure; substrate material; annealing step; pure layer; permit formation; desired layer; crystalline substrate; pure layers; monocrystalline layer; crystalline layer; /427/204/
Citation Formats
Musket, Ronald G, Brown, David W, and Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1992.
Web.
Musket, Ronald G, Brown, David W, & Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, Ronald G, Brown, David W, and Munir, Zuhair A. Wed .
"Process for forming one or more substantially pure layers in substrate material using ion implantation". United States. https://www.osti.gov/servlets/purl/868358.
@article{osti_868358,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, Ronald G and Brown, David W and Munir, Zuhair A},
abstractNote = {A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
Works referenced in this record:
Phase equilibria and diffusion in the Be-Al-Fe
journal, June 1976
- Myers, S. M.; Smugeresky, J. E.
- Metallurgical Transactions A, Vol. 7, Issue 6
Metastable alloys of beryllium prepared by ion implantation
journal, October 1984
- Buene, L.; Kaufmann, E. N.; Hamm, R.
- Metallurgical Transactions A, Vol. 15, Issue 10