Process for forming one or more substantially pure layers in substrate material using ion implantation
Abstract
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.
- Inventors:
-
- San Ramon, CA
- Livermore, CA
- Davis, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 867638
- Patent Number(s):
- 4976987
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; forming; substantially; pure; layers; substrate; material; implantation; disclosed; layer; implantable; element; selecting; implanted; temperatures; limited; mutual; solubility; form; intermediate; phases; implanting; sufficient; amount; permit; formation; desired; annealing; step; required; formed; implantable element; sufficient amount; substantially pure; substrate material; annealing step; pure layer; permit formation; desired layer; pure layers; /427/204/
Citation Formats
Musket, Ronald G, Brown, David W, and Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1990.
Web.
Musket, Ronald G, Brown, David W, & Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, Ronald G, Brown, David W, and Munir, Zuhair A. Mon .
"Process for forming one or more substantially pure layers in substrate material using ion implantation". United States. https://www.osti.gov/servlets/purl/867638.
@article{osti_867638,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, Ronald G and Brown, David W and Munir, Zuhair A},
abstractNote = {A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}
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