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Title: Process for forming one or more substantially pure layers in substrate material using ion implantation

Abstract

A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.

Inventors:
 [1];  [2];  [3]
  1. San Ramon, CA
  2. Livermore, CA
  3. Davis, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
867638
Patent Number(s):
4976987
Assignee:
United States of America as represented by Department of Energy (Washington, DC)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; forming; substantially; pure; layers; substrate; material; implantation; disclosed; layer; implantable; element; selecting; implanted; temperatures; limited; mutual; solubility; form; intermediate; phases; implanting; sufficient; amount; permit; formation; desired; annealing; step; required; formed; implantable element; sufficient amount; substantially pure; substrate material; annealing step; pure layer; permit formation; desired layer; pure layers; /427/204/

Citation Formats

Musket, Ronald G, Brown, David W, and Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1990. Web.
Musket, Ronald G, Brown, David W, & Munir, Zuhair A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, Ronald G, Brown, David W, and Munir, Zuhair A. Mon . "Process for forming one or more substantially pure layers in substrate material using ion implantation". United States. https://www.osti.gov/servlets/purl/867638.
@article{osti_867638,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, Ronald G and Brown, David W and Munir, Zuhair A},
abstractNote = {A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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