Process for forming one or more substantially pure layers in substrate material using ion implantation
- San Ramon, CA
- Livermore, CA
- Davis, CA
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- United States of America as represented by Department of Energy (Washington, DC)
- Patent Number(s):
- US 4976987
- OSTI ID:
- 867638
- Country of Publication:
- United States
- Language:
- English
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Process for forming one or more substantially pure layers in substrate material using ion implantation
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forming
substantially
pure
layers
substrate
material
implantation
disclosed
layer
implantable
element
selecting
implanted
temperatures
limited
mutual
solubility
form
intermediate
phases
implanting
sufficient
amount
permit
formation
desired
annealing
step
required
formed
implantable element
sufficient amount
substantially pure
substrate material
annealing step
pure layer
permit formation
desired layer
pure layers
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