Process for forming one or more substantially pure layers in substrate material using ion implantation
Abstract
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. 2 figs.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7073224
- Patent Number(s):
- 4976987
- Application Number:
- PPN: US 7-391904
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 10 Aug 1989
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SUBSTRATES; ION IMPLANTATION; ANNEALING; LAYERS; SOLUBILITY; HEAT TREATMENTS; 360101* - Metals & Alloys- Preparation & Fabrication; 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Musket, R G, Brown, D W, and Munir, Z A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States: N. p., 1990.
Web.
Musket, R G, Brown, D W, & Munir, Z A. Process for forming one or more substantially pure layers in substrate material using ion implantation. United States.
Musket, R G, Brown, D W, and Munir, Z A. Tue .
"Process for forming one or more substantially pure layers in substrate material using ion implantation". United States.
@article{osti_7073224,
title = {Process for forming one or more substantially pure layers in substrate material using ion implantation},
author = {Musket, R G and Brown, D W and Munir, Z A},
abstractNote = {A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {12}
}
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