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Title: Substrate structures for InP-based devices

Abstract

A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

Inventors:
 [1];  [2]
  1. (Golden, CO)
  2. (Lakewood, CO)
Issue Date:
Research Org.:
MIDWEST RESEARCH INSTITUTE
OSTI Identifier:
867566
Patent Number(s):
4963949
Assignee:
United States of America as represented of United States (Washington, DC) NREL
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
substrate; structures; inp-based; devices; structure; semiconductor; device; inp; based; film; disclosed; region; lightweight; bulk; upper; gaas; layer; interconnecting; disposed; compositionally; graded; intermediate; substantially; lattice-matched; opposite; dislocation; mechanism; cooperation; buffer; blocking; inhibiting; propagation; threading; dislocations; compositionally graded; semiconductor device; intermediate layer; gaas layer; substrate region; mechanism disposed; substrate structure; interconnecting region; /257/136/438/

Citation Formats

Wanlass, Mark W., and Sheldon, Peter. Substrate structures for InP-based devices. United States: N. p., 1990. Web.
Wanlass, Mark W., & Sheldon, Peter. Substrate structures for InP-based devices. United States.
Wanlass, Mark W., and Sheldon, Peter. Mon . "Substrate structures for InP-based devices". United States. https://www.osti.gov/servlets/purl/867566.
@article{osti_867566,
title = {Substrate structures for InP-based devices},
author = {Wanlass, Mark W. and Sheldon, Peter},
abstractNote = {A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1990},
month = {1}
}

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