Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

Patent ·
OSTI ID:863676
 [1]
  1. Yardley, PA
+ Show Author Affiliations
The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.
Research Organization:
RCA Labs., Princeton, NJ (USA)
Assignee:
RCA Corporation (New York, NY)
Patent Number(s):
US 4226643
OSTI ID:
863676
Country of Publication:
United States
Language:
English

Similar Records

Method of enhancing the electronic properties of an undoped and/or n-type hydrogenated amorphous silicon film
Patent · Tue Oct 07 00:00:00 EDT 1980 · OSTI ID:6565082
Hydrogenated amorphous silicon-germanium alloys
Technical Report · Sun Jan 31 23:00:00 EST 1988 · OSTI ID:5323397
Photochemical vapor deposition of undoped and n-type amorphous silicon films produced from disilane
Journal Article · Sat Oct 15 00:00:00 EDT 1983 · Appl. Phys. Lett.; (United States) · OSTI ID:5840200

Related Subjects

/136/427/
10
90
amorphous
amorphous silicon
amount
argon
atmosphere
compound
conductivity
containing
containing compound
contains
dark
dc
discharge
electronic
electronic properties
enhancing
fabricated
film
glow
glow discharge
hydrogen containing
hydrogenated
hydrogenated amorphous
incorporation
increased
layer
method
n-type
percent
photoconductivity
properties
proximity
silane
silicon
silicon film
silicon layer
silicon-hydrogen
undoped
volume
volume percent