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Title: Cermet layer for amorphous silicon solar cells

Abstract

A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

Inventors:
 [1]
  1. Lawrenceville, NJ
Issue Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863418
Patent Number(s):
4167015
Assignee:
RCA Corporation (New York, NY)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
cermet; layer; amorphous; silicon; solar; cells; transparent; function; metal; forms; schottky; barrier; cell; adheres; schottky barrier; amorphous silicon; solar cell; solar cells; silicon solar; barrier amorphous; function metal; metal cermet; cermet layer; /136/148/257/

Citation Formats

Hanak, Joseph J. Cermet layer for amorphous silicon solar cells. United States: N. p., 1979. Web.
Hanak, Joseph J. Cermet layer for amorphous silicon solar cells. United States.
Hanak, Joseph J. Mon . "Cermet layer for amorphous silicon solar cells". United States. https://www.osti.gov/servlets/purl/863418.
@article{osti_863418,
title = {Cermet layer for amorphous silicon solar cells},
author = {Hanak, Joseph J},
abstractNote = {A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1979},
month = {Mon Jan 01 00:00:00 EST 1979}
}