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Title: Superlattice doped layers for amorphous silicon photovoltaic cells

Abstract

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Inventors:
 [1]
  1. Doylestown, PA
Issue Date:
OSTI Identifier:
866471
Patent Number(s):
4718947
Application Number:
06/853,032
Assignee:
Solarex Corporation (Rockville, MD)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
ZB4030563
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
superlattice; doped; layers; amorphous; silicon; photovoltaic; cells; comprise; plurality; lattices; alternatingly; formed; optical; bandgap; method; fabricating; disclosed; photovoltaic cells; amorphous silicon; photovoltaic cell; doped layer; silicon photovoltaic; doped layers; superlattice doped; cells comprise; optical band; /136/148/257/438/

Citation Formats

Arya, Rajeewa R. Superlattice doped layers for amorphous silicon photovoltaic cells. United States: N. p., 1988. Web.
Arya, Rajeewa R. Superlattice doped layers for amorphous silicon photovoltaic cells. United States.
Arya, Rajeewa R. Tue . "Superlattice doped layers for amorphous silicon photovoltaic cells". United States. https://www.osti.gov/servlets/purl/866471.
@article{osti_866471,
title = {Superlattice doped layers for amorphous silicon photovoltaic cells},
author = {Arya, Rajeewa R},
abstractNote = {Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

Patent:

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