Superlattice doped layers for amorphous silicon photovoltaic cells
Abstract
Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.
- Inventors:
-
- Doylestown, PA
- Issue Date:
- OSTI Identifier:
- 866471
- Patent Number(s):
- 4718947
- Application Number:
- 06/853,032
- Assignee:
- Solarex Corporation (Rockville, MD)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- ZB4030563
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- superlattice; doped; layers; amorphous; silicon; photovoltaic; cells; comprise; plurality; lattices; alternatingly; formed; optical; bandgap; method; fabricating; disclosed; photovoltaic cells; amorphous silicon; photovoltaic cell; doped layer; silicon photovoltaic; doped layers; superlattice doped; cells comprise; optical band; /136/148/257/438/
Citation Formats
Arya, Rajeewa R. Superlattice doped layers for amorphous silicon photovoltaic cells. United States: N. p., 1988.
Web.
Arya, Rajeewa R. Superlattice doped layers for amorphous silicon photovoltaic cells. United States.
Arya, Rajeewa R. Tue .
"Superlattice doped layers for amorphous silicon photovoltaic cells". United States. https://www.osti.gov/servlets/purl/866471.
@article{osti_866471,
title = {Superlattice doped layers for amorphous silicon photovoltaic cells},
author = {Arya, Rajeewa R},
abstractNote = {Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}