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Title: Solar cell with a gallium nitride electrode

Abstract

A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

Inventors:
 [1]
  1. Princeton, NJ
Issue Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
863284
Patent Number(s):
4139858
Assignee:
RCA Corporation (New York, NY)
DOE Contract Number:  
EY-76-C-03-1286
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
solar; cell; gallium; nitride; electrode; comprises; silicon; p-n; junction; therein; transparent; conducting; n-type; layer; ohmic; contact; semiconductor; exposed; radiation; p-n junction; gallium nitride; solar cell; solar radiation; ohmic contact; n-type gallium; nitride layer; transparent conducting; nitride electrode; type gallium; junction therein; /136/148/257/

Citation Formats

Pankove, Jacques I. Solar cell with a gallium nitride electrode. United States: N. p., 1979. Web.
Pankove, Jacques I. Solar cell with a gallium nitride electrode. United States.
Pankove, Jacques I. Mon . "Solar cell with a gallium nitride electrode". United States. https://www.osti.gov/servlets/purl/863284.
@article{osti_863284,
title = {Solar cell with a gallium nitride electrode},
author = {Pankove, Jacques I},
abstractNote = {A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1979},
month = {1}
}

Patent:

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