Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Bhattacharya, Raghu N; Hasoon, Falah S; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

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Title: Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Abstract

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Inventors:

Bhattacharya, Raghu N ^[1]; Hasoon, Falah S ^[2]; Wiesner, Holm ^[3]; Keane, James ^[4]; Noufi, Rommel ^[3]; Ramanathan, Kannan ^[3]

Littleton, CO
Arvada, CO
Golden, CO
Lakewood, CO

Issue Date:: 1999-02-16

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

OSTI Identifier:: 872149

Patent Number(s):: 5871630

Application Number:: 08/870,081

Assignee:: Davis, Joseph & Negley (Austin, TX)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25D - PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C28/023 - {only coatings of metal elements only}

C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25D - PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS
C25D3/56 - of alloys
C25D5/18 - Electroplating using modulated, pulsed or reversing current

G - PHYSICS G03 - PHOTOGRAPHY G03C - PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES
G03C1/22 - with an even number of CH groups

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02568 - {Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02614 - {Transformation of metal, e.g. oxidation, nitridation}
H01L21/02628 - {using solutions}
H01L31/0322 - {comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2}
H01L31/0749 - including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/541 - CuInSe2 material PV cells

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S205/915 - Electrolytic deposition of semiconductor
Y10S438/93 - Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

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DOE Contract Number:: 1326

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: preparation; copper-indium-gallium-diselenide; precursor; films; electrodeposition; fabricating; efficiency; solar; cells; photovoltaic; cell; exhibiting; overall; conversion; 13; prepared; film; fabricated; simultaneously; electrodepositing; copper; indium; gallium; selenium; glass; molybdenum; substrate; 12; 14; voltage; frequency; superimposed; dc; improve; morphology; growth; rate; followed; physical; vapor; deposition; adjust; final; stoichiometry; approximately; cu; 1-n; ratio; 39; efficiency solar; precursor film; precursor films; growth rate; conversion efficiency; solar cell; solar cells; vapor deposition; dc voltage; physical vapor; photovoltaic cell; /205/136/

Citation Formats


                    Bhattacharya, Raghu N, Hasoon, Falah S, Wiesner, Holm, Keane, James, Noufi, Rommel, and Ramanathan, Kannan. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells.  United States: N. p., 1999. 
        Web.

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                    Bhattacharya, Raghu N, Hasoon, Falah S, Wiesner, Holm, Keane, James, Noufi, Rommel, & Ramanathan, Kannan. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells.  United States.

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                    Bhattacharya, Raghu N, Hasoon, Falah S, Wiesner, Holm, Keane, James, Noufi, Rommel, and Ramanathan, Kannan. Tue .  
        "Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells".  United States.  https://www.osti.gov/servlets/purl/872149.

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@article{osti_872149,

  title        = {Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells},

  author       = {Bhattacharya, Raghu N and Hasoon, Falah S and Wiesner, Holm and Keane, James and Noufi, Rommel and Ramanathan, Kannan},

  abstractNote = {A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1999},

  month        = {2}

}

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Works referenced in this record:

Solution Growth and Electrodeposited CuInSe2Thin Films
journal, October 1983

Bhattacharya, R. N.
Journal of The Electrochemical Society, Vol. 130, Issue 10
https://doi.org/10.1149/1.2119516

Electrodeposition of CuInX () thin films
journal, January 1986

Bhattacharya, R. N.; Rajeshwar, K.
Solar Cells, Vol. 16
https://doi.org/10.1016/0379-6787(86)90087-6

Recrystallization of electrodeposited copper indium diselenide thin films in an atmosphere of elemental selenium
journal, May 1994

Guillemoles, Jean Fran�ois; Lusson, Alain; Cowache, Pierre
Advanced Materials, Vol. 6, Issue 5
https://doi.org/10.1002/adma.19940060507

Solar cells with improved efficiency based on electrodeposited copper indium diselenide thin films
journal, May 1994

Guillemoles, Jean Fran�ois; Cowache, Pierre; Massaccesi, Sylvie
Advanced Materials, Vol. 6, Issue 5
https://doi.org/10.1002/adma.19940060508

Pulse Plated Electrodeposition of CuInSe2 Films
journal, July 1987

Lokhande, C. D.
Journal of The Electrochemical Society, Vol. 134, Issue 7
https://doi.org/10.1149/1.2100745

Electrochemical synthesis of photoactive In2Se3 thin films
journal, December 1987

Herrero, J.; Ortega, J.
Solar Energy Materials, Vol. 16, Issue 6
https://doi.org/10.1016/0165-1633(87)90049-9

Low cost methods for the production of semiconductor films for CuInSe₂/CdS solar cells
journal, June 1987

Kapur, Vijay K.; Basol, Bulent M.; Tseng, Eric S.
Solar Cells, Vol. 21, Issue 1-4, p. 65-72
https://doi.org/10.1016/0379-6787(87)90105-0

Accelerated publication 17.1% efficient Cu(In,Ga)Se ₂ -based thin-film solar cell
journal, January 1995

Tuttle, J. R.; Contreras, M. A.; Gillespie, T. J.
Progress in Photovoltaics: Research and Applications, Vol. 3, Issue 4
https://doi.org/10.1002/pip.4670030404

Device quality thin films of CuInSe2 by a one-step electrodeposition process
journal, May 1988

Pern, F. J.; Goral, J.; Matson, R. J.
Solar Cells, Vol. 24, Issue 1-2
https://doi.org/10.1016/0379-6787(88)90038-5

Preparation and Characterization of Electrodeposited CuInSe ₂ Thin Films
journal, April 1993

Sudo, Yoshihiro; Endo, Saburo; Irie, Taizo
Japanese Journal of Applied Physics, Vol. 32, Issue Part 1, No. 4
https://doi.org/10.1143/JJAP.32.1562

Optical properties of electrochemically deposited CuInSe2 thin films
journal, November 1991

Guillén, C.; Herrero, J.
Solar Energy Materials, Vol. 23, Issue 1
https://doi.org/10.1016/0165-1633(91)90151-A

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Title: Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Abstract

Citation Formats

Solution Growth and Electrodeposited CuInSe2Thin Films journal, October 1983

Electrodeposition of CuInX () thin films journal, January 1986

Recrystallization of electrodeposited copper indium diselenide thin films in an atmosphere of elemental selenium journal, May 1994

Solar cells with improved efficiency based on electrodeposited copper indium diselenide thin films journal, May 1994

Pulse Plated Electrodeposition of CuInSe2 Films journal, July 1987

Electrochemical synthesis of photoactive In2Se3 thin films journal, December 1987

Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells journal, June 1987

Accelerated publication 17.1% efficient Cu(In,Ga)Se 2 -based thin-film solar cell journal, January 1995

Device quality thin films of CuInSe2 by a one-step electrodeposition process journal, May 1988

Preparation and Characterization of Electrodeposited CuInSe 2 Thin Films journal, April 1993

Optical properties of electrochemically deposited CuInSe2 thin films journal, November 1991

Solution Growth and Electrodeposited CuInSe2Thin Films
journal, October 1983

Electrodeposition of CuInX () thin films
journal, January 1986

Recrystallization of electrodeposited copper indium diselenide thin films in an atmosphere of elemental selenium
journal, May 1994

Solar cells with improved efficiency based on electrodeposited copper indium diselenide thin films
journal, May 1994

Pulse Plated Electrodeposition of CuInSe2 Films
journal, July 1987

Electrochemical synthesis of photoactive In2Se3 thin films
journal, December 1987

Low cost methods for the production of semiconductor films for CuInSe₂/CdS solar cells
journal, June 1987

Accelerated publication 17.1% efficient Cu(In,Ga)Se ₂ -based thin-film solar cell
journal, January 1995

Device quality thin films of CuInSe2 by a one-step electrodeposition process
journal, May 1988

Preparation and Characterization of Electrodeposited CuInSe ₂ Thin Films
journal, April 1993

Optical properties of electrochemically deposited CuInSe2 thin films
journal, November 1991