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Title: Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Abstract

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Inventors:
 [1];  [2];  [3];  [4];  [3];  [3]
  1. Littleton, CO
  2. Arvada, CO
  3. Golden, CO
  4. Lakewood, CO
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
872149
Patent Number(s):
5871630
Application Number:
08/870,081
Assignee:
Davis, Joseph & Negley (Austin, TX)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
1326
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
preparation; copper-indium-gallium-diselenide; precursor; films; electrodeposition; fabricating; efficiency; solar; cells; photovoltaic; cell; exhibiting; overall; conversion; 13; prepared; film; fabricated; simultaneously; electrodepositing; copper; indium; gallium; selenium; glass; molybdenum; substrate; 12; 14; voltage; frequency; superimposed; dc; improve; morphology; growth; rate; followed; physical; vapor; deposition; adjust; final; stoichiometry; approximately; cu; 1-n; ratio; 39; efficiency solar; precursor film; precursor films; growth rate; conversion efficiency; solar cell; solar cells; vapor deposition; dc voltage; physical vapor; photovoltaic cell; /205/136/

Citation Formats

Bhattacharya, Raghu N, Hasoon, Falah S, Wiesner, Holm, Keane, James, Noufi, Rommel, and Ramanathan, Kannan. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells. United States: N. p., 1999. Web.
Bhattacharya, Raghu N, Hasoon, Falah S, Wiesner, Holm, Keane, James, Noufi, Rommel, & Ramanathan, Kannan. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells. United States.
Bhattacharya, Raghu N, Hasoon, Falah S, Wiesner, Holm, Keane, James, Noufi, Rommel, and Ramanathan, Kannan. Tue . "Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells". United States. https://www.osti.gov/servlets/purl/872149.
@article{osti_872149,
title = {Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells},
author = {Bhattacharya, Raghu N and Hasoon, Falah S and Wiesner, Holm and Keane, James and Noufi, Rommel and Ramanathan, Kannan},
abstractNote = {A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {2}
}

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Works referenced in this record:

Solution Growth and Electrodeposited CuInSe2Thin Films
journal, October 1983


Electrodeposition of CuInX () thin films
journal, January 1986


Recrystallization of electrodeposited copper indium diselenide thin films in an atmosphere of elemental selenium
journal, May 1994


Solar cells with improved efficiency based on electrodeposited copper indium diselenide thin films
journal, May 1994


Pulse Plated Electrodeposition of CuInSe2 Films
journal, July 1987


Electrochemical synthesis of photoactive In2Se3 thin films
journal, December 1987


Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells
journal, June 1987


Accelerated publication 17.1% efficient Cu(In,Ga)Se 2 -based thin-film solar cell
journal, January 1995


Device quality thin films of CuInSe2 by a one-step electrodeposition process
journal, May 1988


Preparation and Characterization of Electrodeposited CuInSe 2 Thin Films
journal, April 1993


Optical properties of electrochemically deposited CuInSe2 thin films
journal, November 1991