Plasma generating apparatus for large area plasma processing
Abstract
A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm[sup 2]. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity. 3 figures.
- Inventors:
- Issue Date:
- OSTI Identifier:
- 7083823
- Patent Number(s):
- 5032202
- Application Number:
- PPN: US 7-416804
- Assignee:
- Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 3 Oct 1989
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; INTEGRATED CIRCUITS; ETCHING; PLASMA PRODUCTION; MICROWAVE RADIATION; BEAM PRODUCTION; ELECTRON CYCLOTRON-RESONANCE; ION BEAMS; MAGNETIC CONFINEMENT; MICROWAVE EQUIPMENT; PHOTORESISTORS; BEAMS; CONFINEMENT; CYCLOTRON RESONANCE; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; MICROELECTRONIC CIRCUITS; PLASMA CONFINEMENT; RADIATIONS; RESISTORS; RESONANCE; SURFACE FINISHING; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)
Citation Formats
Tsai, C C, Gorbatkin, S M, and Berry, L A. Plasma generating apparatus for large area plasma processing. United States: N. p., 1991.
Web.
Tsai, C C, Gorbatkin, S M, & Berry, L A. Plasma generating apparatus for large area plasma processing. United States.
Tsai, C C, Gorbatkin, S M, and Berry, L A. Tue .
"Plasma generating apparatus for large area plasma processing". United States.
@article{osti_7083823,
title = {Plasma generating apparatus for large area plasma processing},
author = {Tsai, C C and Gorbatkin, S M and Berry, L A},
abstractNote = {A plasma generating apparatus for plasma processing applications is based on a permanent magnet line-cusp plasma confinement chamber coupled to a compact single-coil microwave waveguide launcher. The device creates an electron cyclotron resonance (ECR) plasma in the launcher and a second ECR plasma is created in the line cusps due to a 0.0875 tesla magnetic field in that region. Additional special magnetic field configuring reduces the magnetic field at the substrate to below 0.001 tesla. The resulting plasma source is capable of producing large-area (20-cm diam), highly uniform (.+-.5%) ion beams with current densities above 5 mA/cm[sup 2]. The source has been used to etch photoresist on 5-inch diam silicon wafers with good uniformity. 3 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 16 00:00:00 EDT 1991},
month = {Tue Jul 16 00:00:00 EDT 1991}
}