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Title: Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

Abstract

Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

Inventors:
Issue Date:
Research Org.:
University of California
OSTI Identifier:
288028
Patent Number(s):
5,545,257
Application Number:
PAN: 8-258,958
Assignee:
Electro-Graph, Inc., Carlsbad, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 13 Aug 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COLD PLASMA; PLASMA PRODUCTION; SEMICONDUCTOR MATERIALS; ION IMPLANTATION; PROCESSING

Citation Formats

Vella, M C. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing. United States: N. p., 1996. Web.
Vella, M C. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing. United States.
Vella, M C. Tue . "Magnetic filter apparatus and method for generating cold plasma in semiconductor processing". United States.
@article{osti_288028,
title = {Magnetic filter apparatus and method for generating cold plasma in semiconductor processing},
author = {Vella, M C},
abstractNote = {Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {8}
}