Magnetic filter apparatus and method for generating cold plasma in semiconductor processing
Abstract
Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.
- Inventors:
- Issue Date:
- Research Org.:
- Univ. of California (United States)
- OSTI Identifier:
- 288028
- Patent Number(s):
- 5545257
- Application Number:
- PAN: 8-258,958
- Assignee:
- Electro-Graph, Inc., Carlsbad, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 13 Aug 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; COLD PLASMA; PLASMA PRODUCTION; SEMICONDUCTOR MATERIALS; ION IMPLANTATION; PROCESSING
Citation Formats
Vella, M C. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing. United States: N. p., 1996.
Web.
Vella, M C. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing. United States.
Vella, M C. Tue .
"Magnetic filter apparatus and method for generating cold plasma in semiconductor processing". United States.
@article{osti_288028,
title = {Magnetic filter apparatus and method for generating cold plasma in semiconductor processing},
author = {Vella, M C},
abstractNote = {Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {8}
}
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