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Title: Microelectronic superconducting device with multi-layer contact

Abstract

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.

Inventors:
; ;
Issue Date:
OSTI Identifier:
5403807
Patent Number(s):
5256636
Application Number:
PPN: US 7-586435
Assignee:
Univ. of Calif., Oakland, CA (United States)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Resource Relation:
Patent File Date: 21 Sep 1990
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MICROELECTRONIC CIRCUITS; DESIGN; SUPERCONDUCTING DEVICES; FABRICATION; HIGH-TC SUPERCONDUCTORS; MASKING; STRONTIUM TITANATES; SUPERCONDUCTING FILMS; ALKALINE EARTH METAL COMPOUNDS; ELECTRONIC CIRCUITS; FILMS; OXYGEN COMPOUNDS; STRONTIUM COMPOUNDS; SUPERCONDUCTORS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 665412* - Superconducting Devices- (1992-)

Citation Formats

Wellstood, F C, Kingston, J J, and Clarke, J. Microelectronic superconducting device with multi-layer contact. United States: N. p., 1993. Web.
Wellstood, F C, Kingston, J J, & Clarke, J. Microelectronic superconducting device with multi-layer contact. United States.
Wellstood, F C, Kingston, J J, and Clarke, J. Tue . "Microelectronic superconducting device with multi-layer contact". United States.
@article{osti_5403807,
title = {Microelectronic superconducting device with multi-layer contact},
author = {Wellstood, F C and Kingston, J J and Clarke, J},
abstractNote = {A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}