Global to push GA events into
skip to main content

Title: Microelectronic superconducting device with multi-layer contact

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T[sub c] superconductor thin film, a second insulating thin film comprising SrTiO[sub 3] ; and a third high T[sub c] superconducting film which has strips which crossover one or more areas of the first superconductor film. An in situ method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T[sub c] superconductor thin films. 14 figures.
Inventors:
; ;
Issue Date:
OSTI Identifier:
5403807
Assignee:
Univ. of Calif., Oakland, CA (United States) PTO; EDB-94-048936
Patent Number(s):
US 5256636; A
Application Number:
PPN: US 7-586435
Contract Number:
AC03-76SF00098
Resource Relation:
Patent File Date: 21 Sep 1990
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; MICROELECTRONIC CIRCUITS; DESIGN; SUPERCONDUCTING DEVICES; FABRICATION; HIGH-TC SUPERCONDUCTORS; MASKING; STRONTIUM TITANATES; SUPERCONDUCTING FILMS; ALKALINE EARTH METAL COMPOUNDS; ELECTRONIC CIRCUITS; FILMS; OXYGEN COMPOUNDS; STRONTIUM COMPOUNDS; SUPERCONDUCTORS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; 665412* - Superconducting Devices- (1992-)