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Title: Devices and methods featuring the addition of refractory metals to contact interface layers

Abstract

Disclosed embodiments include CdS/CdTe PV devices (100) having a back contact (110,112) with oxygen gettering capacity. Also disclosed are back contact structures (110, 112) and methods of forming a back contact in a CdS/CdTe PV device (100). The described contacts and methods feature a contact having a contact interface layer (100) comprising a contact interface material, a p-type dopant and a gettering metal.

Inventors:
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650903
Patent Number(s):
10651323
Application Number:
16/106,571
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC36-08 G028308
Resource Type:
Patent
Resource Relation:
Patent File Date: 08/21/2018
Country of Publication:
United States
Language:
English

Citation Formats

Gessert, Timothy A. Devices and methods featuring the addition of refractory metals to contact interface layers. United States: N. p., 2020. Web.
Gessert, Timothy A. Devices and methods featuring the addition of refractory metals to contact interface layers. United States.
Gessert, Timothy A. Tue . "Devices and methods featuring the addition of refractory metals to contact interface layers". United States. https://www.osti.gov/servlets/purl/1650903.
@article{osti_1650903,
title = {Devices and methods featuring the addition of refractory metals to contact interface layers},
author = {Gessert, Timothy A.},
abstractNote = {Disclosed embodiments include CdS/CdTe PV devices (100) having a back contact (110,112) with oxygen gettering capacity. Also disclosed are back contact structures (110, 112) and methods of forming a back contact in a CdS/CdTe PV device (100). The described contacts and methods feature a contact having a contact interface layer (100) comprising a contact interface material, a p-type dopant and a gettering metal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

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