Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

Gessert, Timothy A

Title: Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

Abstract

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

Inventors:

Gessert, Timothy A ^[1]

Conifer, CO

Issue Date:: 1999-01-01

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

OSTI Identifier:: 872319

Patent Number(s):: 5909632

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/022425 - {for solar cells}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/45 - Ohmic electrodes
H01L31/02963 - {characterised by the doping material}

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DOE Contract Number:: AC36-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: separate; znte; interface; layers; form; ohmic; contacts; p-cdte; films; method; improving; electrical; contact; film; p-type; tellurium-containing; ii-vi; semiconductor; comprising; depositing; undoped; layer; tellurium; containing; material; properties; selected; limit; formation; potential; barriers; thickness; sufficient; control; diffusion; metallic-doped; tellurim-containing; minimize; affects; series; resistance; heavy; doped; appropriate; dopant; metal; outer-most; surface; connecting; external; conductor; series resistance; doped p-type; thickness sufficient; electrical contact; material properties; ohmic contact; electrical conductor; doped layer; ii-vi semiconductor; ohmic contacts; appropriate metal; interface layer; semiconductor comprising; p-type tellurium-containing; p-cdte films; external electrical; tellurium-containing ii-vi; undoped layer; interface layers; external electric; p-type tellurium; /438/136/

Citation Formats


                    Gessert, Timothy A. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films.  United States: N. p., 1999. 
        Web.

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                    Gessert, Timothy A. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films.  United States.

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                    Gessert, Timothy A. Fri .  
        "Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films".  United States.  https://www.osti.gov/servlets/purl/872319.

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@article{osti_872319,

  title        = {Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films},

  author       = {Gessert, Timothy A},

  abstractNote = {A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1999},

  month        = {1}

}

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Works referenced in this record:

Electrochemical deposition of thin ZnTe films as a contact for CdTe solar cells
journal, April 1992

Mondal, Anup; McCandless, Brian E.; Birkmire, Robert W.
Solar Energy Materials and Solar Cells, Vol. 26, Issue 3
https://doi.org/10.1016/0927-0248(92)90059-X

Ohmic contacts and doping of CdTe
journal, June 1987

Fahrenbruch, Alan L.
Solar Cells, Vol. 21, Issue 1-4
https://doi.org/10.1016/0379-6787(87)90138-4

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Title: Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films

Abstract

Citation Formats

Electrochemical deposition of thin ZnTe films as a contact for CdTe solar cells journal, April 1992

Ohmic contacts and doping of CdTe journal, June 1987

Electrochemical deposition of thin ZnTe films as a contact for CdTe solar cells
journal, April 1992

Ohmic contacts and doping of CdTe
journal, June 1987