Microelectronic superconducting device with multi-layer contact

Title: Microelectronic superconducting device with multi-layer contact

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Abstract

A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.

Inventors:

Wellstood, Frederick C ^[1]; Kingston, John J ^[2]; Clarke, John ^[1]

Berkeley, CA
Oakland, CA

Issue Date:: 1993-01-01

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

OSTI Identifier:: 868984

Patent Number(s):: 5256636

Assignee:: Regents of University of Calif. (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L39/2461 - {Intermediate layers, e.g. for growth control}
H01L39/2464 - {After-treatment, e.g. patterning}
H01L39/2422 - {Processes for depositing or forming superconductor layers}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S505/702 - Josephson junction present
Y10S505/701 - Coated or thin film device, i.e. active or passive

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DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: microelectronic; superconducting; device; multi-layer; contact; component; comprising; crossover; provided; substrate; superconductor; film; insulating; srtio; third; strips; insitu; method; depositing; films; require; annealing; steps; photolithographic; process; separately; pattern; component comprising; superconducting film; provided comprising; annealing steps; film comprising; annealing step; superconducting device; superconductor film; situ method; comprising srtio; microelectronic superconducting; microelectronic component; conducting film; /505/257/427/

Citation Formats


                    Wellstood, Frederick C, Kingston, John J, and Clarke, John. Microelectronic superconducting device with multi-layer contact.  United States: N. p., 1993. 
        Web.

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                    Wellstood, Frederick C, Kingston, John J, & Clarke, John. Microelectronic superconducting device with multi-layer contact.  United States.

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                    Wellstood, Frederick C, Kingston, John J, and Clarke, John. Fri .  
        "Microelectronic superconducting device with multi-layer contact".  United States.  https://www.osti.gov/servlets/purl/868984.

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@article{osti_868984,

  title        = {Microelectronic superconducting device with multi-layer contact},

  author       = {Wellstood, Frederick C and Kingston, John J and Clarke, John},

  abstractNote = {A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1993},

  month        = {1}

}

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