Optical device with low electrical and thermal resistance Bragg reflectors

Lear, K L

Title: Optical device with low electrical and thermal resistance Bragg reflectors

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Abstract

A compound-semiconductor optical device and method are disclosed. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors. 16 figs.

Inventors:: Lear, K L

Issue Date:: 1996-10-22

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 392655

Patent Number(s):: 5568499

Application Number:: PAN: 8-418,730

Assignee:: Sandia Corp., Albuquerque, NM (United States)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 22 Oct 1996

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LIGHT EMITTING DIODES; DESIGN; SEMICONDUCTOR LASERS; SEMICONDUCTOR DEVICES; BRAGG REFLECTION

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                    Lear, K L. Optical device with low electrical and thermal resistance Bragg reflectors.  United States: N. p., 1996. 
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                    Lear, K L. Optical device with low electrical and thermal resistance Bragg reflectors.  United States.

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                    Lear, K L. Tue .  
        "Optical device with low electrical and thermal resistance Bragg reflectors".  United States.

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@article{osti_392655,

  title        = {Optical device with low electrical and thermal resistance Bragg reflectors},

  author       = {Lear, K L},

  abstractNote = {A compound-semiconductor optical device and method are disclosed. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors. 16 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {10}

}

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Optical device with low electrical and thermal resistance bragg reflectors

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A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.
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We report the reproducible molecular beam epitaxial growth of Be-doped piecewise linearly graded (Al,Ga)As distributed Bragg reflectors that have vertical series resistivities near bulk values. For mirrors with three linear segments per interface, the center wavelength reproducibility is 0.1% and the series resistivity is as low as 1.8[times]10[sup [minus]5] [Omega] cm[sup 2] for hole concentrations of 5[times]10[sup 18] cm[sup [minus]3]. Measured reflectivities of 6.0% per interface are comparable to conventional single-linear-grade mirrors. Vertical-cavity surface-emitting lasers incorporating these mirrors exhibit record-low voltage thresholds of less than 1.5 V.
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We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 {mu}m with a maximum reflectivity exceeding 99%. We also measure current--voltage characteristics in a similar 10 1/2 period {ital p}-type DBR and find that a current density of 1 {ital kA}/{ital cm}{sup 2} produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
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