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Title: Optical device with low electrical and thermal resistance Bragg reflectors

Abstract

A compound-semiconductor optical device and method are disclosed. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors. 16 figs.

Inventors:
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
392655
Patent Number(s):
5568499
Application Number:
PAN: 8-418,730
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 22 Oct 1996
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; LIGHT EMITTING DIODES; DESIGN; SEMICONDUCTOR LASERS; SEMICONDUCTOR DEVICES; BRAGG REFLECTION

Citation Formats

Lear, K L. Optical device with low electrical and thermal resistance Bragg reflectors. United States: N. p., 1996. Web.
Lear, K L. Optical device with low electrical and thermal resistance Bragg reflectors. United States.
Lear, K L. Tue . "Optical device with low electrical and thermal resistance Bragg reflectors". United States.
@article{osti_392655,
title = {Optical device with low electrical and thermal resistance Bragg reflectors},
author = {Lear, K L},
abstractNote = {A compound-semiconductor optical device and method are disclosed. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors. 16 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 22 00:00:00 EDT 1996},
month = {Tue Oct 22 00:00:00 EDT 1996}
}

Patent:
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