Low resistance wavelength-reproducible [ital p]-type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy
Journal Article
·
· Applied Physics Letters; (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We report the reproducible molecular beam epitaxial growth of Be-doped piecewise linearly graded (Al,Ga)As distributed Bragg reflectors that have vertical series resistivities near bulk values. For mirrors with three linear segments per interface, the center wavelength reproducibility is 0.1% and the series resistivity is as low as 1.8[times]10[sup [minus]5] [Omega] cm[sup 2] for hole concentrations of 5[times]10[sup 18] cm[sup [minus]3]. Measured reflectivities of 6.0% per interface are comparable to conventional single-linear-grade mirrors. Vertical-cavity surface-emitting lasers incorporating these mirrors exhibit record-low voltage thresholds of less than 1.5 V.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6952365
- Journal Information:
- Applied Physics Letters; (United States), Vol. 62:14; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM ARSENIDES
BRAGG REFLECTION
GALLIUM ARSENIDES
BERYLLIUM ADDITIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
MIRRORS
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
REFLECTIVITY
SEMICONDUCTOR LASERS
TERNARY ALLOY SYSTEMS
THRESHOLD CURRENT
ALLOY SYSTEMS
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM ALLOYS
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
LASERS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
SURFACE PROPERTIES
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)
426002 - Engineering- Lasers & Masers- (1990-)
42 ENGINEERING
ALUMINIUM ARSENIDES
BRAGG REFLECTION
GALLIUM ARSENIDES
BERYLLIUM ADDITIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
MIRRORS
MOLECULAR BEAM EPITAXY
P-TYPE CONDUCTORS
REFLECTIVITY
SEMICONDUCTOR LASERS
TERNARY ALLOY SYSTEMS
THRESHOLD CURRENT
ALLOY SYSTEMS
ALLOYS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM ALLOYS
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM COMPOUNDS
LASERS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SOLID STATE LASERS
SURFACE PROPERTIES
360601* - Other Materials- Preparation & Manufacture
360606 - Other Materials- Physical Properties- (1992-)
426002 - Engineering- Lasers & Masers- (1990-)