Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasers

Journal Article · Mon Jun 18 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102869· OSTI ID:6875328

Tai, K; Yang, L; Wang, Y H; Wynn, J D; Cho, A Y ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)

Modifications to reduce the series resistance in {ital p}-type semiconductor distributed Bragg reflectors (DBR) consisting of ten pairs of quarter-wavelength GaAs (high refractive index)/Al{sub 0.7}Ga{sub 0.3}As (low index) layers were made by inserting an intermediate Al{sub 0.35}Ga{sub 0.65}As layer or a 200 A superlattice of GaAs(10 A)/Al{sub 0.7}Ga{sub 0.3}As (10 A) at the GaAs/Al{sub 0.7}Ga{sub 0.3}As heterointerfaces. The specific DBR series resistance was reduced by two orders of magnitude to about 6.2{times}10{sup {minus}5} {Omega} cm{sup 2}. These modifications did not alter the optical reflectivity and nearly identical reflection spectra were measured.

• OSTI ID: 6875328
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:25; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
BAND THEORY
BRAGG REFLECTION
CURRENTS
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
LASER CAVITIES
LASER MIRRORS
LASERS
MIRRORS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
REFLECTION
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE PROPERTIES
THRESHOLD CURRENT