Low-threshold surface-emitting laser diodes with distributed Bragg reflectors and current blocking layers

Journal Article · Mon Sep 24 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104096· OSTI ID:6527706

Shimada, M; Asaka, T; Yamasaki, Y; Iwano, H ^[1]; Ogura, M; Mukai, S ^[2]

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1. Compound Semiconductors Laboratory, Seiko Epson Corporation, 1010, Fujimi, Fujimi-machi, Suwa-gun, Nagano 399-02 (Japan)
2. Electrotechnical Laboratory, Tsukuba, Ibaraki (Japan)

AlGaAs/GaAs surface-emitting laser diodes (SELDs) with distributed Bragg reflectors (DBRs) and current blocking layers are fabricated with the combination of a two-step epitaxial growth and the reactive ion beam etching (RIBE) technique. An Al{sub 0.1}Ga{sub 0.9}As/Al{sub 0.7}Ga{sub 0.3}As multilayer and an amorphous silicon ({ital a}-Si)/silicon dioxide (SiO{sub 2}) multilayer are employed for the lower and upper mirrors, respectively. The active region has a 5{times}5 {mu}m or 4 {mu}m {phi} area and a 0.8 {mu}m thickness. The minimum threshold current is 3.3 mA under pulsed condition and 4.1 mA under continuous wave (cw) operation at 12 {degree}C with junction-side-up configuration. Stable single longitudinal mode is observed, and far-field pattern (FFP) indicates higher transverse mode operation.

• OSTI ID: 6527706
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MIRRORS
LASERS
MIRRORS
MODULATION
OPERATION
PNICTIDES
QUANTUM EFFICIENCY
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT