Optical device with low electrical and thermal resistance bragg reflectors

Lear, Kevin L

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Title: Optical device with low electrical and thermal resistance bragg reflectors

Abstract

A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.

Inventors:

Lear, Kevin L ^[1]

Albuquerque, NM

Issue Date:: Mon Jan 01 00:00:00 EST 1996

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 870657

Patent Number(s):: 5568499

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/18308 - {having a special structure for lateral current or light confinement}
H01S5/18313 - {by oxidizing at least one of the DBR layers}
H01S5/18333 - {only above the active layer}
H01S5/18341 - {Intra-cavity contacts}
H01S5/18358 - {containing spacer layers to adjust the phase of the light wave in the cavity}
H01S5/18361 - {Structure of the reflectors, e.g. hybrid mirrors}
H01S5/18369 - {based on dielectric materials}
H01S5/18377 - {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers}
H01S5/2063 - {obtained by particle bombardment}
H01S5/3211 - {characterised by special cladding layers, e.g. details on band-discontinuities}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: optical; device; electrical; thermal; resistance; bragg; reflectors; compound-semiconductor; method; provided; asymmetrically-graded; heterojunctions; compound; semiconductor; layers; forming; distributed; reflector; mirror; improved; efficient; light-emitting; devices; diodes; resonant-cavity; vertical-cavity; surface-emitting; lasers; formed; according; applied; formation; photodetectors; cavity surface; surface-emitting laser; emitting diodes; emitting diode; light-emitting diode; bragg reflector; vertical-cavity surface-emitting; semiconductor layer; compound semiconductor; optical device; surface-emitting lasers; improved electrical; thermal resistance; light-emitting diodes; semiconductor layers; resonant-cavity light-emitting; semiconductor optical; emitting laser; distributed bragg; emitting device; light-emitting device; emitting lasers; bragg reflectors; /372/257/

Citation Formats


                    Lear, Kevin L. Optical device with low electrical and thermal resistance bragg reflectors.  United States: N. p., 1996. 
        Web.

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                    Lear, Kevin L. Optical device with low electrical and thermal resistance bragg reflectors.  United States.

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                    Lear, Kevin L. Mon .  
        "Optical device with low electrical and thermal resistance bragg reflectors".  United States.  https://www.osti.gov/servlets/purl/870657.

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@article{osti_870657,

  title        = {Optical device with low electrical and thermal resistance bragg reflectors},

  author       = {Lear, Kevin L},

  abstractNote = {A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Jan 01 00:00:00 EST 1996},

  month        = {Mon Jan 01 00:00:00 EST 1996}

}

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Works referenced in this record:

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface‐emitting lasers
journal, June 1990

Tai, K.; Yang, L.; Wang, Y. H.
Applied Physics Letters, Vol. 56, Issue 25
https://doi.org/10.1063/1.102869

High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers
journal, July 1994

Lear, K. L.; Kilcoyne, S. P.; Chalmers, S. A.
IEEE Photonics Technology Letters, Vol. 6, Issue 7
https://doi.org/10.1109/68.311452

Low threshold planarized vertical-cavity surface-emitting lasers
journal, April 1990

Geels, R. S.; Corzine, S. W.; Scott, J. W.
IEEE Photonics Technology Letters, Vol. 2, Issue 4
https://doi.org/10.1109/68.53246

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994

Lear, K. L.; Schneider, R. P.; Choquette, K. D.
Electronics Letters, Vol. 30, Issue 24
https://doi.org/10.1049/el:19941421

Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers
journal, December 1993

Peters, M. G.; Thibeault, B. J.; Young, D. B.
Applied Physics Letters, Vol. 63, Issue 25
https://doi.org/10.1063/1.110156

Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy
journal, September 1994

Lear, K. L.; Schneider, R. P.; Choquette, K. D.
IEEE Photonics Technology Letters, Vol. 6, Issue 9
https://doi.org/10.1109/68.324666

Elimination of heterojunction band discontinuities by modulation doping
journal, January 1992

Schubert, E. F.; Tu, L. W.; Zydzik, G. J.
Applied Physics Letters, Vol. 60, Issue 4
https://doi.org/10.1063/1.106636

N‐ and P‐ type dopant profiles in distributed Bragg reflector structures and their effect on resistance
journal, October 1992

Kopf, R. F.; Schubert, E. F.; Downey, S. W.
Applied Physics Letters, Vol. 61, Issue 15
https://doi.org/10.1063/1.108385

GaAs, AlAs, and Al _x Ga _{1− x} As: Material parameters for use in research and device applications
journal, August 1985

Adachi, Sadao
Journal of Applied Physics, Vol. 58, Issue 3
https://doi.org/10.1063/1.336070

Low resistance wavelength‐reproducible p ‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy
journal, April 1993

Chalmers, S. A.; Lear, K. L.; Killeen, K. P.
Applied Physics Letters, Vol. 62, Issue 14
https://doi.org/10.1063/1.109608

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Similar Records

Title: Optical device with low electrical and thermal resistance bragg reflectors

Abstract

Citation Formats

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface‐emitting lasers journal, June 1990

High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers journal, July 1994

Low threshold planarized vertical-cavity surface-emitting lasers journal, April 1990

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal, November 1994

Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers journal, December 1993

Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy journal, September 1994

Elimination of heterojunction band discontinuities by modulation doping journal, January 1992

N‐ and P‐ type dopant profiles in distributed Bragg reflector structures and their effect on resistance journal, October 1992

GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications journal, August 1985

Low resistance wavelength‐reproducible p ‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy journal, April 1993

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface‐emitting lasers
journal, June 1990

High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers
journal, July 1994

Low threshold planarized vertical-cavity surface-emitting lasers
journal, April 1990

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994

Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers
journal, December 1993

Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy
journal, September 1994

Elimination of heterojunction band discontinuities by modulation doping
journal, January 1992

N‐ and P‐ type dopant profiles in distributed Bragg reflector structures and their effect on resistance
journal, October 1992

GaAs, AlAs, and Al _x Ga _{1− x} As: Material parameters for use in research and device applications
journal, August 1985

Low resistance wavelength‐reproducible p ‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy
journal, April 1993