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Title: Optical device with low electrical and thermal resistance bragg reflectors

Patent ·
OSTI ID:870657
 [1]
  1. Albuquerque, NM
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A compound-semiconductor optical device and method. The optical device is provided with one or more asymmetrically-graded heterojunctions between compound semiconductor layers for forming a distributed Bragg reflector mirror having an improved electrical and thermal resistance. Efficient light-emitting devices such as light-emitting diodes, resonant-cavity light-emitting diodes, and vertical-cavity surface-emitting lasers may be formed according to the present invention, which may be applied to the formation of resonant-cavity photodetectors.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5568499
OSTI ID:
870657
Country of Publication:
United States
Language:
English

References (10)

Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface‐emitting lasers journal June 1990
High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers journal July 1994
Low threshold planarized vertical-cavity surface-emitting lasers journal April 1990
Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal November 1994
Band‐gap engineered digital alloy interfaces for lower resistance vertical‐cavity surface‐emitting lasers journal December 1993
Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy journal September 1994
Elimination of heterojunction band discontinuities by modulation doping journal January 1992
N‐ and P‐ type dopant profiles in distributed Bragg reflector structures and their effect on resistance journal October 1992
GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications journal August 1985
Low resistance wavelength‐reproducible p ‐type (Al,Ga)As distributed Bragg reflectors grown by molecular beam epitaxy journal April 1993

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Related Subjects

optical
device
electrical
thermal
resistance
bragg
reflectors
compound-semiconductor
method
provided
asymmetrically-graded
heterojunctions
compound
semiconductor
layers
forming
distributed
reflector
mirror
improved
efficient
light-emitting
devices
diodes
resonant-cavity
vertical-cavity
surface-emitting
lasers
formed
according
applied
formation
photodetectors
cavity surface
surface-emitting laser
emitting diodes
emitting diode
light-emitting diode
bragg reflector
vertical-cavity surface-emitting
semiconductor layer
compound semiconductor
optical device
surface-emitting lasers
improved electrical
thermal resistance
light-emitting diodes
semiconductor layers
resonant-cavity light-emitting
semiconductor optical
emitting laser
distributed bragg
emitting device
light-emitting device
emitting lasers
bragg reflectors
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