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Title: Level-conversion circuits utilizing level-dependent inverter supply voltages

Abstract

Voltage level conversion circuits include PMOS pull-down devices or NMOS pull-up devices, and inverters with outputs that determine gate voltages of these devices. The inverters are powered by moving supply voltages, for example complementary supply voltages generated from a pair of cross-coupled inverters. The cross-coupled inverters may implement a data storage latch with the moving supply voltages generated from the internal data storage nodes of the latch.

Inventors:
; ;
Issue Date:
Research Org.:
Nvidia Corp., Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
2293901
Patent Number(s):
11824533
Application Number:
17/814,752
Assignee:
NVIDIA Corporation (Santa Clara, CA)
DOE Contract Number:  
B609487
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/25/2022
Country of Publication:
United States
Language:
English

Citation Formats

Turner, Walker Joseph, Poulton, John, and Song, Sanquan. Level-conversion circuits utilizing level-dependent inverter supply voltages. United States: N. p., 2023. Web.
Turner, Walker Joseph, Poulton, John, & Song, Sanquan. Level-conversion circuits utilizing level-dependent inverter supply voltages. United States.
Turner, Walker Joseph, Poulton, John, and Song, Sanquan. Tue . "Level-conversion circuits utilizing level-dependent inverter supply voltages". United States. https://www.osti.gov/servlets/purl/2293901.
@article{osti_2293901,
title = {Level-conversion circuits utilizing level-dependent inverter supply voltages},
author = {Turner, Walker Joseph and Poulton, John and Song, Sanquan},
abstractNote = {Voltage level conversion circuits include PMOS pull-down devices or NMOS pull-up devices, and inverters with outputs that determine gate voltages of these devices. The inverters are powered by moving supply voltages, for example complementary supply voltages generated from a pair of cross-coupled inverters. The cross-coupled inverters may implement a data storage latch with the moving supply voltages generated from the internal data storage nodes of the latch.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 21 00:00:00 EST 2023},
month = {Tue Nov 21 00:00:00 EST 2023}
}

Works referenced in this record: