Wide band gap semiconductor NAND based neutron detection systems and methods

Preston, Jeffrey Robert; Stowe, Ashley C.

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Title: Wide band gap semiconductor NAND based neutron detection systems and methods

Abstract

A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.

Inventors:: Preston, Jeffrey Robert; Stowe, Ashley C.

Issue Date:: Tue Jun 06 00:00:00 EDT 2023

Research Org.:: Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1998440

Patent Number(s):: 11668845

Application Number:: 17/370,366

Assignee:: Consolidated Nuclear Security, LLC (Oak Ridge, TN)

DOE Contract Number:: NA0001942

Resource Type:: Patent

Resource Relation:: Patent File Date: 07/08/2021

Country of Publication:: United States

Language:: English

Citation Formats


                    Preston, Jeffrey Robert, and Stowe, Ashley C. Wide band gap semiconductor NAND based neutron detection systems and methods.  United States: N. p., 2023. 
        Web.

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                    Preston, Jeffrey Robert, & Stowe, Ashley C. Wide band gap semiconductor NAND based neutron detection systems and methods.  United States.

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                    Preston, Jeffrey Robert, and Stowe, Ashley C. Tue .  
        "Wide band gap semiconductor NAND based neutron detection systems and methods".  United States.  https://www.osti.gov/servlets/purl/1998440.

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@article{osti_1998440,

  title        = {Wide band gap semiconductor NAND based neutron detection systems and methods},

  author       = {Preston, Jeffrey Robert and Stowe, Ashley C.},

  abstractNote = {A wide band gap semiconductor NAND based neutron detection system includes a semiconductor layer comprising a wide band gap material with a neutron absorber material in the wide band gap material, and the semiconductor layer is the only layer of the wide band gap semiconductor NAND based neutron detection system fabricated with the neutron absorber material.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jun 06 00:00:00 EDT 2023},

  month        = {Tue Jun 06 00:00:00 EDT 2023}

}

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Similar Records

Title: Wide band gap semiconductor NAND based neutron detection systems and methods

Abstract

Citation Formats

Neutron detecting semiconductor device patent, June 2000

Field-Effect Transistor Memory patent, June 1968

Response functions of semiconducting lithium indium diselenide journal, June 2016

Semiconductor substrate incorporating a neutron conversion layer patent, March 2005

Rechargeable solid state neutron detector and visible radiation indicator patent, May 2017

A Heavy-Ion Detector Based on 3-D NAND Flash Memories journal, January 2020

Semiconductor radiation detector patent, March 2010

Scintillator based fiber optic plate for neutron imaging applications and the like patent, October 2018

Handheld Dual Thermal Neutron Detector and Gamma-Ray Spectrometer patent-application, March 2017

Neutron Detection Chip Assembly patent-application, September 2013

Preliminary tests of a high efficiency 1-D silicon pixel array for small angle neutron scattering conference, January 2007

Radiation resistant solid state neutron detector patent, March 1998

Radiation area monitor device and method patent, May 2018

Neutron Detector Having Plurality of Sensing Elements patent-application, November 2012

Neutron absorption detector patent, May 2011

Thermal neutron detector and gamma-ray spectrometer utilizing a single material patent, May 2017

Bulk semiconducting scintillator device for radiation detection patent, August 2016

Systems and Methods for Particle Detection and Error Correction in an Integrated Circuit patent-application, March 2017

Radiation area monitor device and method patent, January 2018

Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like patent, May 2016

Activation detector patent, December 2009

Neutron detecting semiconductor device
patent, June 2000

Field-Effect Transistor Memory
patent, June 1968

Response functions of semiconducting lithium indium diselenide
journal, June 2016

Semiconductor substrate incorporating a neutron conversion layer
patent, March 2005

Rechargeable solid state neutron detector and visible radiation indicator
patent, May 2017

A Heavy-Ion Detector Based on 3-D NAND Flash Memories
journal, January 2020

Semiconductor radiation detector
patent, March 2010

Scintillator based fiber optic plate for neutron imaging applications and the like
patent, October 2018

Handheld Dual Thermal Neutron Detector and Gamma-Ray Spectrometer
patent-application, March 2017

Neutron Detection Chip Assembly
patent-application, September 2013

Preliminary tests of a high efficiency 1-D silicon pixel array for small angle neutron scattering
conference, January 2007

Radiation resistant solid state neutron detector
patent, March 1998

Radiation area monitor device and method
patent, May 2018

Neutron Detector Having Plurality of Sensing Elements
patent-application, November 2012

Neutron absorption detector
patent, May 2011

Thermal neutron detector and gamma-ray spectrometer utilizing a single material
patent, May 2017

Bulk semiconducting scintillator device for radiation detection
patent, August 2016

Systems and Methods for Particle Detection and Error Correction in an Integrated Circuit
patent-application, March 2017

Radiation area monitor device and method
patent, January 2018

Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like
patent, May 2016

Activation detector
patent, December 2009