Wide band gap semiconductor templates

Arendt, Paul N; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F; Usov, Igor O

Title: Wide band gap semiconductor templates

Abstract

The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

Inventors:

Arendt, Paul N ^[1]; Stan, Liliana ^[1]; Jia, Quanxi ^[1]; DePaula, Raymond F ^[2]; Usov, Igor O ^[1]

Los Alamos, NM
Santa Fe, NM

Issue Date:: 2010-12-14

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1009832

Patent Number(s):: 7851412

Application Number:: 11/707,611

Assignee:: Los Alamos National Security, LLC (Los Alamos, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02554 - {Oxides}
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/02 - Epitaxial-layer growth

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0242 - {Crystalline insulating materials}
H01L21/02488 - {Insulating materials}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/16 - Oxides

Show less

DOE Contract Number:: AC52-06NA25396

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Arendt, Paul N, Stan, Liliana, Jia, Quanxi, DePaula, Raymond F, and Usov, Igor O. Wide band gap semiconductor templates.  United States: N. p., 2010. 
        Web.

Copy to clipboard


                    Arendt, Paul N, Stan, Liliana, Jia, Quanxi, DePaula, Raymond F, & Usov, Igor O. Wide band gap semiconductor templates.  United States.

Copy to clipboard


                    Arendt, Paul N, Stan, Liliana, Jia, Quanxi, DePaula, Raymond F, and Usov, Igor O. Tue .  
        "Wide band gap semiconductor templates".  United States.  https://www.osti.gov/servlets/purl/1009832.

Copy to clipboard


                    
@article{osti_1009832,

  title        = {Wide band gap semiconductor templates},

  author       = {Arendt, Paul N and Stan, Liliana and Jia, Quanxi and DePaula, Raymond F and Usov, Igor O},

  abstractNote = {The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2010},

  month        = {12}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations
journal, January 2005

Navrotsky, Alexandra
Journal of Materials Chemistry, Vol. 15, Issue 19
https://doi.org/10.1039/b417143h

Deposition of in-plane textured MgO on amorphous Si₃N₄ substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia
journal, November 1997

Wang, C. P.; Do, K. B.; Beasley, M. R.
Applied Physics Letters, Vol. 71, Issue 20, p. 2955-2957
https://doi.org/10.1063/1.120227

Similar Records in DOE Patents and OSTI.GOV collections:

Fabrication of photonic band gap materials using microtransfer molded templates

Patent Leung, Wai; Constant, Kristen; Ho, Kai-Ming; ...

A method of manufacturing photonic band gap structures operable in the optical spectrum has been presented. The method comprises the steps of creating a patterned template for an elastomeric mold, fabricating an elastomeric mold from poly-dimethylsiloxane (PDMS) or other suitable polymer, filling the elastomeric mold with a second polymer such as epoxy or other suitable polymer, stamping the second polymer by making contact with a substrate or multilayer structure, removing the elastomeric mold, infiltrating the multilayer structure with ceramic or metal, and heating the multilayer structure to remove the second polymer to form a photonic band gap structure.
Full Text Available
Low profile, highly configurable, current sharing paralleled wide band gap power device power module

Patent McPherson, Brice; Killeen, Peter; Lostetter, Alex; ...

A method of making a power module includes providing a base plate defining a topology pattern, providing a power substrate above the base plate, providing at least two power contacts and arranging solder catches in the at least two power contacts, soldering the at least two power contacts to the power substrate utilizing the solder catches, and securing a housing to the power substrate.
Full Text Available
Low profile, highly configurable, current sharing paralleled wide band gap power device power module

Patent McPherson, Brice; Killeen, Peter D.; Lostetter, Alex; ...

A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.
Full Text Available
Method for implantation of high dopant concentrations in wide band gap materials

Patent Usov, Igor [Los Alamos, NM]; Arendt, Paul N [Los Alamos, NM]

A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film;more » « less
Full Text Available
Direct band gap group IV semiconductors and methods of preparing the same

Patent Yoo, Jinkyoung

A semiconductor film includes a two-dimensional (2D) material layer having a hexagonal in-plane lattice structure, and a substantially planar Group IV semiconductor layer having a direct band gap on the 2D material layer. A method of fabricating a semiconductor material includes growing a Group IV semiconductor material on a two-dimensional material having a hexagonal in-plane lattice structure. This growth process results in the Group IV semiconductor material having a direct band gap. The semiconductor films may be used in any optoelectronic device, including flexible devices.
Full Text Available

Similar Records

Title: Wide band gap semiconductor templates

Abstract

Citation Formats

Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations journal, January 2005

Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia journal, November 1997

Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations
journal, January 2005

Deposition of in-plane textured MgO on amorphous Si₃N₄ substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia
journal, November 1997