Wide band gap semiconductor templates
Abstract
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
- Inventors:
-
- (Los Alamos, NM)
- (Santa Fe, NM)
- Issue Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1009832
- Patent Number(s):
- 7,851,412
- Application Number:
- 11/707,611
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM) ALO
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Arendt, Paul N., Stan, Liliana, Jia, Quanxi, DePaula, Raymond F., and Usov, Igor O. Wide band gap semiconductor templates. United States: N. p., 2010.
Web.
Arendt, Paul N., Stan, Liliana, Jia, Quanxi, DePaula, Raymond F., & Usov, Igor O. Wide band gap semiconductor templates. United States.
Arendt, Paul N., Stan, Liliana, Jia, Quanxi, DePaula, Raymond F., and Usov, Igor O. Tue .
"Wide band gap semiconductor templates". United States. https://www.osti.gov/servlets/purl/1009832.
@article{osti_1009832,
title = {Wide band gap semiconductor templates},
author = {Arendt, Paul N. and Stan, Liliana and Jia, Quanxi and DePaula, Raymond F. and Usov, Igor O.},
abstractNote = {The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {12}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.