Wide band gap semiconductor templates
Abstract
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.
- Inventors:
-
- Los Alamos, NM
- Santa Fe, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1009832
- Patent Number(s):
- 7851412
- Application Number:
- 11/707,611
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Arendt, Paul N, Stan, Liliana, Jia, Quanxi, DePaula, Raymond F, and Usov, Igor O. Wide band gap semiconductor templates. United States: N. p., 2010.
Web.
Arendt, Paul N, Stan, Liliana, Jia, Quanxi, DePaula, Raymond F, & Usov, Igor O. Wide band gap semiconductor templates. United States.
Arendt, Paul N, Stan, Liliana, Jia, Quanxi, DePaula, Raymond F, and Usov, Igor O. Tue .
"Wide band gap semiconductor templates". United States. https://www.osti.gov/servlets/purl/1009832.
@article{osti_1009832,
title = {Wide band gap semiconductor templates},
author = {Arendt, Paul N and Stan, Liliana and Jia, Quanxi and DePaula, Raymond F and Usov, Igor O},
abstractNote = {The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {12}
}
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Works referenced in this record:
Thermochemical insights into refractory ceramic materials based on oxides with large tetravalent cations
journal, January 2005
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Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia
journal, November 1997
- Wang, C. P.; Do, K. B.; Beasley, M. R.
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