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Title: Wide band gap semiconductor templates

Abstract

The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

Inventors:
 [1];  [1];  [1];  [2];  [1]
  1. (Los Alamos, NM)
  2. (Santa Fe, NM)
Issue Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1009832
Patent Number(s):
7,851,412
Application Number:
11/707,611
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) ALO
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Arendt, Paul N., Stan, Liliana, Jia, Quanxi, DePaula, Raymond F., and Usov, Igor O. Wide band gap semiconductor templates. United States: N. p., 2010. Web.
Arendt, Paul N., Stan, Liliana, Jia, Quanxi, DePaula, Raymond F., & Usov, Igor O. Wide band gap semiconductor templates. United States.
Arendt, Paul N., Stan, Liliana, Jia, Quanxi, DePaula, Raymond F., and Usov, Igor O. Tue . "Wide band gap semiconductor templates". United States. https://www.osti.gov/servlets/purl/1009832.
@article{osti_1009832,
title = {Wide band gap semiconductor templates},
author = {Arendt, Paul N. and Stan, Liliana and Jia, Quanxi and DePaula, Raymond F. and Usov, Igor O.},
abstractNote = {The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {12}
}

Patent:

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