Title: Direct band gap group IV semiconductors and methods of preparing the same

Abstract

A semiconductor film includes a two-dimensional (2D) material layer having a hexagonal in-plane lattice structure, and a substantially planar Group IV semiconductor layer having a direct band gap on the 2D material layer. A method of fabricating a semiconductor material includes growing a Group IV semiconductor material on a two-dimensional material having a hexagonal in-plane lattice structure. This growth process results in the Group IV semiconductor material having a direct band gap. The semiconductor films may be used in any optoelectronic device, including flexible devices.

Inventors:

Yoo, Jinkyoung

Issue Date:

2019-04-16

Research Org.:

Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

1568213

Patent Number(s):

10263136

Application Number:

15/793,804

Assignee:

Triad National Security, LLC (Los Alamos, NM)

Patent Classifications (CPCs):

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B23/025 - {characterised by the substrate}
C30B25/18 - characterised by the substrate
C30B29/06 - Silicon
C30B29/08 - Germanium
C30B29/60 - characterised by shape
C30B29/602 - {Nanotubes}
C30B29/64 - Flat crystals, e.g. plates, strips or discs

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/0234 - {treatment by exposure to a plasma}
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02433 - {Crystal orientation}
H01L21/02444 - {Carbon, e.g. diamond-like carbon}
H01L21/02458 - {Nitrides}
H01L21/02485 - {Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H01L21/02499 - {Monolayers}
H01L21/02527 - {Carbon, e.g. diamond-like carbon}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/02609 - {Crystal orientation}
H01L31/1816 - {Special manufacturing methods for microcrystalline layers, e.g. uc-SiGe, uc-SiC}
H01L33/0054 - {for devices with an active region comprising only group IV elements}
H01L33/34 - containing only elements of group IV of the periodic system

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DOE Contract Number:  

AC52-06NA25396

Resource Type:

Patent

Resource Relation:

Patent File Date: 10/25/2017

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY