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Title: Enhanced neutron detector and electron amplifier structure and a method of fabricating the enhanced neutron detector and electron amplifier structure

Abstract

An enhanced electron amplifier structure includes a substrate configured to amplify a signal of an incident particle by causing a cascade of secondary electron emissions and an enhancement layer configured to increase a sensitivity of the substrate to the incident particle. The enhancement layer is provided on an upper surface of the substrate.

Inventors:
;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1531402
Patent Number(s):
10180508
Application Number:
15/691,652
Assignee:
UChicago Argonne, LLC (Chicago, IL)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017-08-30
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY

Citation Formats

Mane, Anil U., and Elam, Jeffrey W. Enhanced neutron detector and electron amplifier structure and a method of fabricating the enhanced neutron detector and electron amplifier structure. United States: N. p., 2019. Web.
Mane, Anil U., & Elam, Jeffrey W. Enhanced neutron detector and electron amplifier structure and a method of fabricating the enhanced neutron detector and electron amplifier structure. United States.
Mane, Anil U., and Elam, Jeffrey W. Tue . "Enhanced neutron detector and electron amplifier structure and a method of fabricating the enhanced neutron detector and electron amplifier structure". United States. https://www.osti.gov/servlets/purl/1531402.
@article{osti_1531402,
title = {Enhanced neutron detector and electron amplifier structure and a method of fabricating the enhanced neutron detector and electron amplifier structure},
author = {Mane, Anil U. and Elam, Jeffrey W.},
abstractNote = {An enhanced electron amplifier structure includes a substrate configured to amplify a signal of an incident particle by causing a cascade of secondary electron emissions and an enhancement layer configured to increase a sensitivity of the substrate to the incident particle. The enhancement layer is provided on an upper surface of the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}

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Works referenced in this record:

Electron transmittance characteristics of MCP ion barrier film
conference, January 2005


Effects of ion barrier film on image noise in generation III image tube
conference, August 2012


Thermoelectric device with multiple, nanometer scale, elements
patent, August 2006