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Title: Solar cell contact formation using laser ablation

Abstract

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Inventors:
; ;
Issue Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1503292
Patent Number(s):
10,211,349
Application Number:
14/793,356
Assignee:
SunPower Corporation (San Jose, CA)
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jul 07
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Harley, Gabriel, Smith, David D., and Cousins, Peter John. Solar cell contact formation using laser ablation. United States: N. p., 2019. Web.
Harley, Gabriel, Smith, David D., & Cousins, Peter John. Solar cell contact formation using laser ablation. United States.
Harley, Gabriel, Smith, David D., and Cousins, Peter John. Tue . "Solar cell contact formation using laser ablation". United States. https://www.osti.gov/servlets/purl/1503292.
@article{osti_1503292,
title = {Solar cell contact formation using laser ablation},
author = {Harley, Gabriel and Smith, David D. and Cousins, Peter John},
abstractNote = {The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {2}
}

Patent:

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