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Title: Solar cell contact formation using laser ablation

Patent ·
OSTI ID:1082483
; ;

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
8,324,015
Application Number:
12/895,437
OSTI ID:
1082483
Country of Publication:
United States
Language:
English

References (3)

Laser-fired rear contacts for crystalline silicon solar cells: LASER-FIRED CONTACTS journal January 2002
Laser ablation of SiO2 for locally contacted Si solar cells with ultra-short pulses journal January 2007
New simplified methods for patterning the rear contact of RP-PERC high-efficiency solar cells
  • Glunz, S. W.; Preu, R.; Schaefer, S.
  • 28th IEEE Photovoltaic Specialists Conference, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) https://doi.org/10.1109/PVSC.2000.915780
conference January 2000

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14 SOLAR ENERGY