Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure
Abstract
An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.
- Inventors:
- Issue Date:
- Research Org.:
- Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1496858
- Patent Number(s):
- 10106911
- Application Number:
- 15/284,767
- Assignee:
- Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- EE0000595
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2016 Oct 04
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Carlson, Frederick M., and Helenbrook, Brian T. Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure. United States: N. p., 2018.
Web.
Carlson, Frederick M., & Helenbrook, Brian T. Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure. United States.
Carlson, Frederick M., and Helenbrook, Brian T. Tue .
"Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure". United States. https://www.osti.gov/servlets/purl/1496858.
@article{osti_1496858,
title = {Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure},
author = {Carlson, Frederick M. and Helenbrook, Brian T.},
abstractNote = {An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 23 00:00:00 EDT 2018},
month = {Tue Oct 23 00:00:00 EDT 2018}
}
Works referenced in this record:
Method and Apparatus for Producing Large Diameter Monocrystals
patent, March 1974
- Bochman, Raymond A.; Dessauer, Ralph G.; Jen, Dian P.
- US Patent Document 3798007
Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
patent, August 1980
- Frosch, Robert A. Administrator of the National Aeronautics and Space; Ciszek, Theodore F.
- US Patent Document 4,217,165
Lateral pulling growth of crystal ribbons
patent, May 1982
- Kudo, Bosshi
- US Patent Document 4,329,195
Single crystal pulling apparatus
patent, February 1999
- Atami, Takashi; Taguchi, Hiroaki; Furuya, Hisashi
- US Patent Document 5,871,581