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Title: Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure

Abstract

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

Inventors:
;
Issue Date:
Research Org.:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1496858
Patent Number(s):
10,106,911
Application Number:
15/284,767
Assignee:
Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA) DOEEE
DOE Contract Number:  
EE0000595
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Oct 04
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carlson, Frederick M., and Helenbrook, Brian T. Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure. United States: N. p., 2018. Web.
Carlson, Frederick M., & Helenbrook, Brian T. Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure. United States.
Carlson, Frederick M., and Helenbrook, Brian T. Tue . "Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure". United States. https://www.osti.gov/servlets/purl/1496858.
@article{osti_1496858,
title = {Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure},
author = {Carlson, Frederick M. and Helenbrook, Brian T.},
abstractNote = {An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {10}
}

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