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Title: Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1440770
Assignee:
Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA) DOEEE
Patent Number(s):
9,970,125
Application Number:
13/398,884
Contract Number:
EE0000595
Resource Relation:
Patent File Date: 2012 Feb 17
Research Org:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Other works cited in this record:

Improvements in the Horizontal Ribbon Growth technique for single crystal silicon
journal, September 1980

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