Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
Abstract
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
- Inventors:
- Issue Date:
- Research Org.:
- Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1440770
- Patent Number(s):
- 9970125
- Application Number:
- 13/398,884
- Assignee:
- Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- EE0000595
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2012 Feb 17
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING
Citation Formats
Mackintosh, Brian H., Kellerman, Peter L., and Sun, Dawei. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt. United States: N. p., 2018.
Web.
Mackintosh, Brian H., Kellerman, Peter L., & Sun, Dawei. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt. United States.
Mackintosh, Brian H., Kellerman, Peter L., and Sun, Dawei. Tue .
"Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt". United States. https://www.osti.gov/servlets/purl/1440770.
@article{osti_1440770,
title = {Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt},
author = {Mackintosh, Brian H. and Kellerman, Peter L. and Sun, Dawei},
abstractNote = {An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2018},
month = {Tue May 15 00:00:00 EDT 2018}
}
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