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Title: Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt

Abstract

An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Inventors:
; ;
Issue Date:
Research Org.:
Leading Edge Crystal Technologies, Inc., Gloucester, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1650942
Patent Number(s):
10662548
Application Number:
15/923,360
Assignee:
Leading Edge Crystal Technologies, Inc. (Gloucester, MA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
EE0000595
Resource Type:
Patent
Resource Relation:
Patent File Date: 03/16/2018
Country of Publication:
United States
Language:
English

Citation Formats

Mackintosh, Brian H., Kellerman, Peter L., and Sun, Dawei. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt. United States: N. p., 2020. Web.
Mackintosh, Brian H., Kellerman, Peter L., & Sun, Dawei. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt. United States.
Mackintosh, Brian H., Kellerman, Peter L., and Sun, Dawei. Tue . "Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt". United States. https://www.osti.gov/servlets/purl/1650942.
@article{osti_1650942,
title = {Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt},
author = {Mackintosh, Brian H. and Kellerman, Peter L. and Sun, Dawei},
abstractNote = {An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

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Works referenced in this record:

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