Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

Carlson, Frederick M.; Helenbrook, Brian T.

Title: Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

Abstract

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

Inventors:: Carlson, Frederick M.; Helenbrook, Brian T.

Issue Date:: 2016-10-11

Research Org.:: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., Gloucester, MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1328697

Patent Number(s):: 9464364

Application Number:: 13/292,410

Assignee:: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (Gloucester, MA)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B15/007 - {Pulling on a substrate}
C30B15/06 - Non-vertical pulling
C30B15/14 - Heating of the melt or the crystallised materials
C30B15/206 - {the thermal history of growing the ingot}
C30B15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystal
C30B15/30 - Mechanisms for rotating or moving either the melt or the crystal
C30B15/305 - {Stirring of the melt}
C30B29/06 - Silicon

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T117/1024 - for crystallization from liquid or supercritical state

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DOE Contract Number:: EE0000595

Resource Type:: Patent

Resource Relation:: Patent File Date: 2011 Nov 09

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Carlson, Frederick M., and Helenbrook, Brian T.. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials.  United States: N. p., 2016. 
        Web.

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                    Carlson, Frederick M., & Helenbrook, Brian T.. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials.  United States.

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                    Carlson, Frederick M., and Helenbrook, Brian T.. Tue .  
        "Thermal load leveling during silicon crystal growth from a melt using anisotropic materials".  United States.  https://www.osti.gov/servlets/purl/1328697.

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@article{osti_1328697,

  title        = {Thermal load leveling during silicon crystal growth from a melt using anisotropic materials},

  author       = {Carlson, Frederick M. and Helenbrook, Brian T.},

  abstractNote = {An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2016},

  month        = {10}

}

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Works referenced in this record:

Method and Apparatus for Producing Large Diameter Monocrystals
patent, March 1974

Bochman, Raymond A.; Dessauer, Ralph G.; Jen, Dian P.
US Patent Document 3798007
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Lateral pulling growth of crystal ribbons and apparatus therefor
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Berkman, Samuel; Metzl, Robert; Novak, Richard
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Kudo, Bosshi; Yoshioka, Masamichi
US Patent Document 4,316,764
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Lateral pulling growth of crystal ribbons
patent, May 1982

Kudo, Bosshi
US Patent Document 4,329,195
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Lateral pulling growth of crystal ribbons
patent, May 1982

Kudo, Bosshi
US Patent Document 4,329,195
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Guidance system for low angle silicon ribbon growth
patent, July 1986

Jewett, David N.; Bates, Herbert Ellsworth; Milstein, Joseph B.
US Patent Document 4,599,132
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Conforming crucible/susceptor system for silicon crystal growth
patent, May 1988

Piotrowski, Paul A.; Kochka, Edgar L.; Duncan, Charles S.
US Patent Document 4,747,774
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Floating sheet production apparatus and method
patent, December 2010

Kellerman, Peter L.; Sinclair, Frank
US Patent Document 7,855,087
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Floating Sheet Production Apparatus and Method
patent-application, September 2009

Kellerman, Peter L.; Sinclair, Frank
US Patent Document 12/403206; 20090233396
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20090233396

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Similar Records

Title: Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

Abstract

Citation Formats

Method and Apparatus for Producing Large Diameter Monocrystals patent, March 1974

Lateral pulling growth of crystal ribbons and apparatus therefor patent, October 1980

Apparatus for and method of supporting a crucible for EFG growth of sapphire patent, February 1981

Method for horizontal ribbon crystal growth patent, February 1982

Lateral pulling growth of crystal ribbons patent, May 1982

Lateral pulling growth of crystal ribbons patent, May 1982

Guidance system for low angle silicon ribbon growth patent, July 1986

Conforming crucible/susceptor system for silicon crystal growth patent, May 1988

Floating sheet production apparatus and method patent, December 2010

Floating Sheet Production Apparatus and Method patent-application, September 2009

Method and Apparatus for Producing Large Diameter Monocrystals
patent, March 1974

Lateral pulling growth of crystal ribbons and apparatus therefor
patent, October 1980

Apparatus for and method of supporting a crucible for EFG growth of sapphire
patent, February 1981

Method for horizontal ribbon crystal growth
patent, February 1982

Lateral pulling growth of crystal ribbons
patent, May 1982

Lateral pulling growth of crystal ribbons
patent, May 1982

Guidance system for low angle silicon ribbon growth
patent, July 1986

Conforming crucible/susceptor system for silicon crystal growth
patent, May 1988

Floating sheet production apparatus and method
patent, December 2010

Floating Sheet Production Apparatus and Method
patent-application, September 2009