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Title: Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

Abstract

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.

Inventors:
;
Issue Date:
Research Org.:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., Gloucester, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1328697
Patent Number(s):
9,464,364
Application Number:
13/292,410
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (Gloucester, MA)
DOE Contract Number:  
EE0000595
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Nov 09
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Carlson, Frederick M., and Helenbrook, Brian T. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials. United States: N. p., 2016. Web.
Carlson, Frederick M., & Helenbrook, Brian T. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials. United States.
Carlson, Frederick M., and Helenbrook, Brian T. Tue . "Thermal load leveling during silicon crystal growth from a melt using anisotropic materials". United States. https://www.osti.gov/servlets/purl/1328697.
@article{osti_1328697,
title = {Thermal load leveling during silicon crystal growth from a melt using anisotropic materials},
author = {Carlson, Frederick M. and Helenbrook, Brian T.},
abstractNote = {An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. The crucible may be operative to contain molten silicon in which the top surface of the molten silicon may be defined as a growth interface. The crucible may be substantially surrounded by the anisotropic thermal load leveling component. The cold plate component may be positioned above the crucible to be operative with the anisotropic thermal load leveling component and heat source to maintain a uniform heat flux at the growth surface of the molten silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {10}
}

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