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Title: Sequential infiltration synthesis for advanced lithography

Abstract

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Inventors:
; ; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1350952
Patent Number(s):
8,980,418
Application Number:
13/427,619
Assignee:
UChicago Argonne, LLC (Chicago, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Mar 22
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Darling, Seth B., Elam, Jeffrey W., Tseng, Yu-Chih, and Peng, Qing. Sequential infiltration synthesis for advanced lithography. United States: N. p., 2015. Web.
Darling, Seth B., Elam, Jeffrey W., Tseng, Yu-Chih, & Peng, Qing. Sequential infiltration synthesis for advanced lithography. United States.
Darling, Seth B., Elam, Jeffrey W., Tseng, Yu-Chih, and Peng, Qing. Tue . "Sequential infiltration synthesis for advanced lithography". United States. https://www.osti.gov/servlets/purl/1350952.
@article{osti_1350952,
title = {Sequential infiltration synthesis for advanced lithography},
author = {Darling, Seth B. and Elam, Jeffrey W. and Tseng, Yu-Chih and Peng, Qing},
abstractNote = {A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {3}
}

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