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Title: Sequential infiltration synthesis for advanced lithography

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1350952
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
Patent Number(s):
8,980,418
Application Number:
13/427,619
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2012 Mar 22
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Works referenced in this record:

Block Copolymer Lithography: Periodic Arrays of 1011 Holes in 1 Square Centimeter
journal, May 1997

Hierarchical self-assembly of metal nanostructures on diblock copolymer scaffolds
journal, December 2001
  • Lopes, Ward A.; Jaeger, Heinrich M.
  • Nature, Vol. 414, Issue 6865, p. 735-738
  • DOI: 10.1038/414735a

UHV transmission electron microscopy on the reconstructed surface of (111) gold: I. General features
journal, November 1981

PRIME process for deep UV and E-beam lithography
journal, April 1990

Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems
journal, November 1989
  • Thackeray, James W.; Orsula, George W.; Bohland, John F.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 6, Article No. 1620
  • DOI: 10.1116/1.584502

Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications
journal, April 2010
  • Kontziampasis, D.; Beltsios, K.; Tegou, E.
  • Journal of Applied Polymer Science, Vol. 117, Issue 4, p. 2189-2195
  • DOI: 10.1002/app.31644

Reduction of line edge roughness in the top surface imaging process
journal, November 1998
  • Mori, Shigeyasu; Morisawa, Taku; Matsuzawa, Nobuyuki
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 6, Article No. 3739
  • DOI: 10.1116/1.590409

High sensitive negative silylation process for 193nm lithography
journal, June 2000

Enhanced polymeric lithography resists via sequential infiltration synthesis
journal, July 2011
  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • Journal of Materials Chemistry, Vol. 21, Issue 32, 11722-11725
  • DOI: 10.1039/C1JM12461G

Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early
journal, April 2012
  • Tseng, Yu-Chih; Mane, Anil U.; Elam, Jeffrey W.
  • Advanced Materials, Vol. 24, Issue 19, p. 2608-2613
  • DOI: 10.1002/adma.201104871

Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers
journal, September 2010
  • Peng, Qing; Tseng, Yu-Chih; Darling, Seth B.
  • Advanced Materials, Vol. 22, Issue 45, p. 5129-5133
  • DOI: 10.1002/adma.201002465

A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates
journal, May 2011
  • Peng, Qing; Tseng, Yu-Chih; Darling, Seth B.
  • ACS Nano, Vol. 5, Issue 6, p. 4600-4606
  • DOI: 10.1021/nn2003234

Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis
journal, July 2011
  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • The Journal of Physical Chemistry C, Vol. 115, Issue 36, p. 17725-17729
  • DOI: 10.1021/jp205532e

Etch properties of resists modified by sequential infiltration synthesis
journal, November 2011
  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 6, Article No. 06FG01
  • DOI: 10.1116/1.3640758

Mobility analysis of surface roughness scattering in FinFET devices
journal, August 2011
  • Lee, Jae Woo; Jang, Doyoung; Mouis, Mireille
  • Solid-State Electronics, Vol. 62, Issue 1, p. 195-201
  • DOI: 10.1016/j.sse.2011.04.020

VDD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations
journal, September 2010
  • Baravelli, Emanuele; Marchi, Luca De; Speciale, Nicolò
  • Solid-State Electronics, Vol. 54, Issue 9, p. 909-918
  • DOI: 10.1016/j.sse.2010.04.035

Hollow Inorganic Nanospheres and Nanotubes with Tunable Wall Thicknesses by Atomic Layer Deposition on Self-Assembled Polymeric Templates
journal, January 2007
  • Ras, R. H. A.; Kemell, M.; de Wit, J.
  • Advanced Materials, Vol. 19, Issue 1, p. 102-106
  • DOI: 10.1002/adma.200600728