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Title: Sequential infiltration synthesis for enhancing multiple-patterning lithography

Abstract

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1364432
Patent Number(s):
9684234
Application Number:
13/902,169
Assignee:
UCHICAGO ARGONNE, LLC
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
ACO2-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 May 24
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States: N. p., 2017. Web.
Darling, Seth B., Elam, Jeffrey W., & Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States.
Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Tue . "Sequential infiltration synthesis for enhancing multiple-patterning lithography". United States. https://www.osti.gov/servlets/purl/1364432.
@article{osti_1364432,
title = {Sequential infiltration synthesis for enhancing multiple-patterning lithography},
author = {Darling, Seth B. and Elam, Jeffrey W. and Tseng, Yu-Chih},
abstractNote = {Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {6}
}

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Works referenced in this record:

Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications
journal, April 2010


Enhanced polymeric lithography resists via sequential infiltration synthesis
journal, July 2011


Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early
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Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers
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A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates
journal, May 2011


Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis
journal, July 2011


Hollow Inorganic Nanospheres and Nanotubes with Tunable Wall Thicknesses by Atomic Layer Deposition on Self-Assembled Polymeric Templates
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Hierarchical self-assembly of metal nanostructures on diblock copolymer scaffolds
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Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors
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