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Title: Sequential infiltration synthesis for enhancing multiple-patterning lithography

Abstract

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1364432
Patent Number(s):
9684234
Application Number:
13/902,169
Assignee:
UCHICAGO ARGONNE, LLC
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
ACO2-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 May 24
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States: N. p., 2017. Web.
Darling, Seth B., Elam, Jeffrey W., & Tseng, Yu-Chih. Sequential infiltration synthesis for enhancing multiple-patterning lithography. United States.
Darling, Seth B., Elam, Jeffrey W., and Tseng, Yu-Chih. Tue . "Sequential infiltration synthesis for enhancing multiple-patterning lithography". United States. https://www.osti.gov/servlets/purl/1364432.
@article{osti_1364432,
title = {Sequential infiltration synthesis for enhancing multiple-patterning lithography},
author = {Darling, Seth B. and Elam, Jeffrey W. and Tseng, Yu-Chih},
abstractNote = {Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {6}
}

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