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Title: Sequential infiltration synthesis for enhancing multiple-patterning lithography

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1364432
Assignee:
UCHICAGO ARGONNE, LLC ANL
Patent Number(s):
9,684,234
Application Number:
13/902,169
Contract Number:
ACO2-06CH11357
Resource Relation:
Patent File Date: 2013 May 24
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Other works cited in this record:

Photolithography process with gas-phase pretreatment
patent, December 2000

Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
patent, December 2014

Methods of laser processing photoresist in a gaseous environment
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Method for line density multiplication using block copolymers and sequential infiltration synthesis
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Ordered nanoscale domains by infiltration of block copolymers
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TRILAYER RESIST SCHEME FOR GATE ETCHING APPLICATIONS
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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
patent-application, September 2010

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patent-application, February 2012

SEQUENTIAL INFILTRATION SYNTHESIS FOR ADVANCED LITHOGRAPHY
patent-application, September 2012

SELECTIVE ATOMIC LAYER DEPOSITION OF PASSIVATION LAYERS FOR SILICON-BASED PHOTOVOLTAIC DEVICES
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