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Title: Sequential infiltration synthesis for advanced lithography

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1398972
Assignee:
UCHICAGO ARGONNE, LLC ANL
Patent Number(s):
9,786,511
Application Number:
14/645,162
Contract Number:
AC02-06CH11357
Resource Relation:
Patent File Date: 2015 Mar 11
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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